Effects of high energy heavy ion irradiation on resistive switches

doi:10.1016/j.mee.2020.111393

	Effects of high energy heavy ion irradiation on resistive switches
	Guo, Xiangyu 1; Liu, Jiande 1,2; Wang, Qi 1; He, Deyan 1
刊名	MICROELECTRONIC ENGINEERING
	2020-07-15
卷号	231 页码:6
关键词	Resistive switching High energy heavy ion Concentrated defects Switching behavior
ISSN号	0167-9317
DOI	10.1016/j.mee.2020.111393
通讯作者	Wang, Qi(wangqi77@lzu.edu.cn)
英文摘要	Resistive switches have great potential in aerospace application due to their excellent radiation resistibility. It is important to study the effect of radiation on resistive switches. In this work, we use Ta5+ with an energy of 125 MeV to irradiate the Cu/Ta2O5 /Pt devices. Here, fresh devices are irradiated by 10(8) and 10(9) ions/cm(2) Ta5+, respectively. The devices exhibit high radiation resistibility under an irradiation dosage of 10(8) ions/cm(2). However, the operating voltage was changed from 5 similar to- 2 V to 2 similar to -1.5 V under a dosage of 10(9) ions/cm(2). High energy heavy ion irradiation can controllably modify the density of defects or pores in resistive layer, reduce the barrier height of the redox reaction and achieve rapid migration of large amounts of ions. Moreover, the defects or pores generated by irradiation will provide growth paths for preventing conducive filaments from random growth and adjust the size of conducive filaments, making them more likely be in a stable state with the lowest energy and increasing the retention to be more than 8 x 10(4) s under a current compliance of 100 mu A.
资助项目	National Natural Science Foundation of China[U1732136] ; National Natural Science Foundation of China[61874051] ; National Natural Science Foundation of China[61404064] ; Fundamental Research Funds for the Central Universities[lzujbky-2018-115]
WOS关键词	DISPLACEMENT DAMAGE ; ELECTROCHEMISTRY ; FILAMENTS ; HARDNESS ; DEVICES ; GROWTH ; RERAM
WOS研究方向	Engineering ; Science & Technology - Other Topics ; Optics ; Physics
语种	英语
出版者	ELSEVIER
WOS记录号	WOS:000566713600015
资助机构	National Natural Science Foundation of China ; Fundamental Research Funds for the Central Universities
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/139810]
专题	中国科学院近代物理研究所
通讯作者	Wang, Qi
作者单位	1.Lanzhou Univ, Sch Phys Sci & Technol, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Guo, Xiangyu,Liu, Jiande,Wang, Qi,et al. Effects of high energy heavy ion irradiation on resistive switches[J]. MICROELECTRONIC ENGINEERING,2020,231:6.
APA	Guo, Xiangyu,Liu, Jiande,Wang, Qi,&He, Deyan.(2020).Effects of high energy heavy ion irradiation on resistive switches.MICROELECTRONIC ENGINEERING,231,6.
MLA	Guo, Xiangyu,et al."Effects of high energy heavy ion irradiation on resistive switches".MICROELECTRONIC ENGINEERING 231(2020):6.