Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire

doi:10.1002/aelm.202000252

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	Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire
	Shih, Yu-Chuan 1,5,6; Lee, Ling 1,5,6,7; Liang, Kai-De 1,5,6; Manikandan, Arumugam 1,5,6; Liu, Wen-Wu 2; Chen, Yu-Ze 3; Chang, Mu-Tung 4; Wang, Zhiming M.7; Chueh, Yu-Lun 1,5,6
刊名	ADVANCED ELECTRONIC MATERIALS
	2021-02
卷号	7 期号:5 页码:-
关键词	Copper Copper oxides Nanocrystalline materials Nanowires Oxide minerals RRAM Single crystals Fabrication process High current densities Random access memory Resistive switching Resistive switching memory Switching behaviors Switching mechanism Switching properties
ISSN号	2199-160X
DOI	10.1002/aelm.202000252
英文摘要	Resistive switching random access memory (ReRAM) has recently generated significant interest due to its potentials used in nanoscale logic, memory devices, and neuromorphic applications. From the device physics, a uniform dielectric layer is necessary to access as the main switching layer to perform stable resistive switching. This, however, makes the fabrication process more challenging. In this regard, a design of resistive switching memory by an in situ current-induced oxidization process on a single crystal metallic nanowire (NW) is demonstrated where a single crystal Cu NW is found as the best material with stable switching behaviors after the in situ current-induced oxidization process. With the in situ current-induced oxidization process by high current density on the Cu NW, a reversible resistive switching up to 100 cycles with a large ON/OFF ratio of >10(3) and a low switching voltage of <0.5 V can be obtained. The initial current-induced oxidation provides a core-shell (Cu2O/Cu) nanowire structure that contributed to the switching properties. The possible switching mechanisms and potential guidelines are systematically proposed. The current work opens up the opportunities to design the ReRAM device with full- metallic materials.
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	Blackwell Publishing Ltd
WOS记录号	WOS:000616769300001
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/147289]
专题	省部共建有色金属先进加工与再利用国家重点实验室
作者单位	1.Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan; 2.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Peoples R China; 3.Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan; 4.Ind Technol Res Inst ITRI, Mat & Chem Res Labs, Hsinchu 31040, Taiwan 5.Natl Tsing Hua Univ, Frontier Res Ctr Fundamental & Appl Sci Matters, Hsinchu 30013, Taiwan; 6.Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan; 7.Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R China;
推荐引用方式 GB/T 7714	Shih, Yu-Chuan,Lee, Ling,Liang, Kai-De,et al. Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire[J]. ADVANCED ELECTRONIC MATERIALS,2021,7(5):-.
APA	Shih, Yu-Chuan.,Lee, Ling.,Liang, Kai-De.,Manikandan, Arumugam.,Liu, Wen-Wu.,...&Chueh, Yu-Lun.(2021).Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire.ADVANCED ELECTRONIC MATERIALS,7(5),-.
MLA	Shih, Yu-Chuan,et al."Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire".ADVANCED ELECTRONIC MATERIALS 7.5(2021):-.