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Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings 期刊论文
journal of nanoelectronics and optoelectronics, 2011, 卷号: 6, 期号: 1, 页码: 51-57
Ding F; Li B; Akopian N; Perinetti U; Chen YH; Peeters FM; Rastelli A; Zwiller V; Schmidt OG
收藏  |  浏览/下载:71/5  |  提交时间:2011/07/05
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载:80/4  |  提交时间:2011/07/05
Characterization and analysis of two-dimensional GaAs-based photonic crystal nanocavities at room temperature 期刊论文
microelectronic engineering, 2010, 卷号: 87, 期号: 10, 页码: 1834-1837
Peng YS (Peng Y. S.); Xu B (Xu B.); Ye XL (Ye X. L.); Niu JB (Niu J. B.); Jia R (Jia R.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载:106/27  |  提交时间:2010/08/17
Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching 期刊论文
solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 962-967
Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP; Wang, GH
收藏  |  浏览/下载:58/4  |  提交时间:2010/03/08
Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers 期刊论文
modern physics letters b, 2007, 卷号: 21, 期号: 14, 页码: 859-866
Sun, J; Zhou, DY; Li, RY; Zhao, C; Ye, XL; Xu, B; Chen, YH; Wang, ZG
收藏  |  浏览/下载:64/5  |  提交时间:2010/03/08
Site controlling of InAs quantum wires on cleaved edges of AlGaAs/GaAs superlattices 期刊论文
nanotechnology, 2005, 卷号: 16, 期号: 8, 页码: 1379-1382
作者:  Jin P;  Xu B
收藏  |  浏览/下载:219/41  |  提交时间:2010/03/17
Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth 期刊论文
science in china series a-mathematics physics astronomy, 2002, 卷号: 45, 期号: 11, 页码: 1461-1467
作者:  Zhao DG
收藏  |  浏览/下载:68/0  |  提交时间:2010/08/12
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching 期刊论文
journal of crystal growth, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
作者:  Zhao DG
收藏  |  浏览/下载:61/0  |  提交时间:2010/08/12


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