Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching

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	Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching
	Gao, HY ; Yan, FW ; Zhang, Y ; Li, JM ; Zeng, YP ; Wang, GH
刊名	solid-state electronics
	2008
卷号	52 期号:6 页码:962-967
关键词	InGaN/GaN multiple quantum wells light-emitting diode wet etching inductively coupled plasma etching
ISSN号	0038-1101
通讯作者	gao, hy, chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china. 电子邮箱地址: hygao@semi.ac.cn
中文摘要	sapphire substrates patterned by a selective chemical wet and an inductively coupled plasma (icp) etching technique was proposed to improve the performance of gan-based light-emitting diodes (leds). gan-based leds were fabricated on sapphire substrates through metal organic chemical vapor deposition (mocvd). the leds fabricated on the patterned substrates exhibit improved device performance compared with the conventional led fabricated on planar substrates when growth and device fabricating conditions were the same. the light output powers of the leds fabricated on wet-patterned and icp-patterned substrates were about 37% and 17% higher than that of leds on planar substrates at an injection current of 20 ma, respectively. the enhancement is attributable to the combination of the improvement of gan-based epilayers quality and the improvement of the light extraction efficiency. (c) 2008 elsevier ltd. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6610]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Gao, HY,Yan, FW,Zhang, Y,et al. Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching[J]. solid-state electronics,2008,52(6):962-967.
APA	Gao, HY,Yan, FW,Zhang, Y,Li, JM,Zeng, YP,&Wang, GH.(2008).Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching.solid-state electronics,52(6),962-967.
MLA	Gao, HY,et al."Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching".solid-state electronics 52.6(2008):962-967.