Site controlling of InAs quantum wires on cleaved edges of AlGaAs/GaAs superlattices

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	Site controlling of InAs quantum wires on cleaved edges of AlGaAs/GaAs superlattices
	Jin P; Xu B
刊名	nanotechnology
	2005
卷号	16 期号:8 页码:1379-1382
关键词	DIFFUSION LENGTH
ISSN号	0957-4484
通讯作者	zhang, cl, chinese acad sci, inst semicond, lab semicond mat sci, pob 912, beijing 100083, peoples r china.
中文摘要	site-controlled inas quantum wires were fabricated on cleaved edges of algaas/gaas superlattices (sls) by solid source molecular beam epitaxy. the cleaved edge of algaas/gaas sls acted as a nanopattern for selective overgrowth after selective etching. by just growing 2.0 ml inas without high temperature degassing, site-controlled inas quantum wires were fabricated on the cleaved edge. furthermore, atomic force microscopy demonstrates the diffusion of in atoms is strong toward the [00 (1) over bar] direction on the (110) surface.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8564]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin P,Xu B. Site controlling of InAs quantum wires on cleaved edges of AlGaAs/GaAs superlattices[J]. nanotechnology,2005,16(8):1379-1382.
APA	Jin P,&Xu B.(2005).Site controlling of InAs quantum wires on cleaved edges of AlGaAs/GaAs superlattices.nanotechnology,16(8),1379-1382.
MLA	Jin P,et al."Site controlling of InAs quantum wires on cleaved edges of AlGaAs/GaAs superlattices".nanotechnology 16.8(2005):1379-1382.