Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings

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	Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings
	Ding F ; Li B ; Akopian N ; Perinetti U ; Chen YH ; Peeters FM ; Rastelli A ; Zwiller V ; Schmidt OG
刊名	journal of nanoelectronics and optoelectronics
	2011
卷号	6 期号:1 页码:51-57
关键词	Quantum Ring Quantum Dot Neutral Exciton Aharonov Bohm Effect Gate Controlled Selective Etching ENERGY-SPECTRA
ISSN号	1555-130x
通讯作者	ding, f, ibm res zurich, saumerstr 4, ch-8803 ruschlikon, switzerland
学科主题	半导体材料
收录类别	SCI
资助信息	nwo (vidi) ; cas-mpg ; dfg [for730]; bmbf [01bm459]; nsfc china [60625402]; flemish science foundation (fwo-v1)
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	we observe the evolution of single self-assembled semiconductor quantum dots into quantum rings during asbr3 in situ etching. the direct three-dimensional imaging of in(ga)as nanostructures embedded in gaas matrix is demonstrated by selective wet chemical etching combined with atomic force microscopy. single neutral excitons confined in these quantum rings are studied by magnetophotoluminescence. oscillations in the exciton radiative recombination energy and in the emission intensity are observed under an applied magnetic field. further, we demonstrate that the period of the oscillations can be tuned by a gate potential that modifies the exciton confinement. the experimental results, combined with calculations, indicate that the exciton aharonov-bohm effect may account for the observed effects.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21239]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Ding F,Li B,Akopian N,et al. Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings[J]. journal of nanoelectronics and optoelectronics,2011,6(1):51-57.
APA	Ding F.,Li B.,Akopian N.,Perinetti U.,Chen YH.,...&Schmidt OG.(2011).Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings.journal of nanoelectronics and optoelectronics,6(1),51-57.
MLA	Ding F,et al."Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings".journal of nanoelectronics and optoelectronics 6.1(2011):51-57.