CORC

在结果中检索

CORC

浏览/检索结果: 共9条，第1-9条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者:  Pan X;  Hou QF
收藏  |  浏览/下载：83/7  |  提交时间：2011/07/05
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202
作者:  Jin P
收藏  |  浏览/下载：43/4  |  提交时间：2011/07/15
High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz 期刊论文
solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 926-929
Wang, XL; Chen, TS; Xiao, HL; Wang, CM; Hu, GX; Luo, WJ; Tang, J; Guo, LC; Li, JM
收藏  |  浏览/下载：77/1  |  提交时间：2010/03/08
Improved performance in organic light emitting diodes with a mixed electron donor-acceptor film involved in hole injection 期刊论文
journal of applied physics, 2007, 卷号: 101, 期号: 12, 页码: art.no.124507
Cao GH (Cao Guohua); Qin DS (Qin Dashan); Cao JS (Cao Junsong); Guan M (Guan Min); Zeng YP (Zeng Yiping); Li JM (Li Jinmin)
收藏  |  浏览/下载：47/0  |  提交时间：2010/03/29
Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition 期刊论文
semiconductor photonics and technology, 2007, 卷号: 13, 期号: 3, 页码: 215-217
LIN Tao; CAI Daomin; LI Xianjie; JIANG Li; ZHANG Guangze
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/23
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418
Wang CM; Wang XL; Hu GX; Wang JX; Xiao HL; Li JP
收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11
Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure 期刊论文
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 762-765
Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Wang JX (Wang Junxi); Li HP (Li Jianping); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures 会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
作者:  Han PD
收藏  |  浏览/下载：83/1  |  提交时间：2010/10/29
Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition 期刊论文
journal of vacuum science & technology a, 2003, 卷号: 21, 期号: 4, 页码: 838-841
Qu BZ; Zhu QS; Sun XH; Wan SK; Wang ZG; Nagai H; Kawaguchi Y; Hiramatsu K; Sawaki N
收藏  |  浏览/下载：291/4  |  提交时间：2010/08/12

©版权所有 ©2017 CSpace - Powered by CSpace