Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure

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	Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure
	Wang CM (Wang Cuimei) ; Wang XL (Wang Xiaoliang) ; Hu GX (Hu Guoxin) ; Wang JX (Wang Junxi) ; Li HP (Li Jianping) ; Wang ZG (Wang Zhanguo)
刊名	applied surface science
	2006
卷号	253 期号:2 页码:762-765
关键词	AlGaN/AlN/GaN two-dimensional electron gas MOCVD ALGAN/GAN HETEROSTRUCTURES POLARIZATION TRANSISTORS GANHEMTS GAS
ISSN号	0169-4332
通讯作者	wang, xl, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. e-mail: xlwang@red.semi.ac.cn
中文摘要	unintentionally doped high-al-content al0.45ga0.55n/gan high electron mobility transistor (hemt) structures with and without aln interfacial layer were grown by metal-organic chemical vapor deposition (mocvd) on two-inch sapphire substrates. the effects of aln interfacial layer on the electrical properties were investigated. at 300 k, high two-dimensional electron gas (2deg) density of 1.66 x 10(11) cm(-2) and high electron mobility of 1346 cm(2) v-1 s(-1) were obtained for the high al content hemt structure with a 1 nm aln interfacial layer, consistent with the low average sheet resistance of 287 omega/sq. the comparison of hemt wafers with and without aln interfacial layer shows that high al content algan/aln/gan heterostructures are potential in improving the electrical properties of hemt structures and the device performances. (c) 2006 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10240]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang CM ,Wang XL ,Hu GX ,et al. Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure[J]. applied surface science,2006,253(2):762-765.
APA	Wang CM ,Wang XL ,Hu GX ,Wang JX ,Li HP ,&Wang ZG .(2006).Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure.applied surface science,253(2),762-765.
MLA	Wang CM ,et al."Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure".applied surface science 253.2(2006):762-765.