Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition
	LIN Tao ; CAI Daomin ; LI Xianjie ; JIANG Li ; ZHANG Guangze
刊名	semiconductor photonics and technology
	2007
卷号	13 期号:3 页码:215-217
中文摘要	high performance inp/ingaas heterojunction bipolar transistors(hbts) have been widely used in high-speed electronic devices and optoelectronic integrated circuits. inp-based hbts were fabricated by low pressure metal organic chemical vapor deposition(mocvd) and wet chemical etching. the sub-collector and collector were grown at 655 ℃ and other layers at 550 ℃. to suppress the zn out-diffusion in hbt, base layer was grown with a 16-minute growth interruption. fabricated hbts with emitter size of 2.5×20 μm~2 showed current gain of 70~90, breakdown voltage(bv_(ce0))>2 v, cut-off frequency(f_t) of 60 ghz and the maximum relaxation frequency(f_(max)) of 70 ghz.
学科主题	半导体材料
收录类别	CSCD
资助信息	chinese high technology developing plan(2 2aa312 4 )
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16219]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	LIN Tao,CAI Daomin,LI Xianjie,et al. Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition[J]. semiconductor photonics and technology,2007,13(3):215-217.
APA	LIN Tao,CAI Daomin,LI Xianjie,JIANG Li,&ZHANG Guangze.(2007).Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition.semiconductor photonics and technology,13(3),215-217.
MLA	LIN Tao,et al."Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition".semiconductor photonics and technology 13.3(2007):215-217.