Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

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	Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures
	Han PD
	2004
会议名称	international conference on materials for advanced technologies
会议日期	dec 07-12, 2003
会议地点	singapore, singapore
关键词	metalorganic chemical vapor deposition semiconducting III-V materials DOPED AL(X)GA1-XN/GAN HETEROSTRUCTURES CARRIER CONFINEMENT EFFECT TRANSISTORS PHOTOLUMINESCENCE MOBILITY HETEROJUNCTION INTERFACE HFETS
页码	504-508
通讯作者	chen z singapore mit alliance ammns e4-04-10nus4 engn dr3 singapore 117576 singapore. 电子邮箱地址: smacz@nus.edu.sg
中文摘要	photoluminescence (pl) and temperature-dependent hall effect measurements were carried out in (0001) and (11 (2) over bar0) algan/gan heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. there are strong spontaneous and piezoelectric electric fields (spf) along the growth orientation of the (0001) algan/gan heterostructures. at the same time there are no corresponding spf along that of the (1120) algan/gan. a strong pl peak related to the recombination between two-dimensional electron gas (2deg) and photoexcited holes was observed at 3.258 ev at room temperature in (0001) algan/gan heterointerfaces while no corresponding pl peak was observed in (11 (2) over bar0). the existence of a 2deg was observed in (0001) algan/gan multi-layers with a mobility saturated at 6000 cm(2)/v s below 80 k, whereas a much lower mobility was measured in (11 (2) over bar0). these results indicated that the spf was the main element to cause the high mobility and high sheet-electron-density 2deg in algan/gan heterostructures. (c) 2004 elsevier b.v. all rights reserved.
英文摘要	photoluminescence (pl) and temperature-dependent hall effect measurements were carried out in (0001) and (11 (2) over bar0) algan/gan heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. there are strong spontaneous and piezoelectric electric fields (spf) along the growth orientation of the (0001) algan/gan heterostructures. at the same time there are no corresponding spf along that of the (1120) algan/gan. a strong pl peak related to the recombination between two-dimensional electron gas (2deg) and photoexcited holes was observed at 3.258 ev at room temperature in (0001) algan/gan heterointerfaces while no corresponding pl peak was observed in (11 (2) over bar0). the existence of a 2deg was observed in (0001) algan/gan multi-layers with a mobility saturated at 6000 cm(2)/v s below 80 k, whereas a much lower mobility was measured in (11 (2) over bar0). these results indicated that the spf was the main element to cause the high mobility and high sheet-electron-density 2deg in algan/gan heterostructures. (c) 2004 elsevier b.v. all rights reserved.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:22z (gmt). no. of bitstreams: 1 2783.pdf: 230538 bytes, checksum: 3bcf352c9d6bf61dd0ad660c25945383 (md5) previous issue date: 2004; singapore mit alliance, ammns, singapore 117576, singapore; inst mat res & engn, singapore 117602, singapore; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议录	journal of crystal growth, 268 (3-4)
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体材料
语种	英语
ISSN号	0022-0248
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13593]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han PD. Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures[C]. 见:international conference on materials for advanced technologies. singapore, singapore. dec 07-12, 2003.