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CORC

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Separative extended-gate AlGaAs/GaAs HEMT biosensors based on capacitance change strategy 期刊论文
APPLIED PHYSICS LETTERS, 2020, 卷号: 116, 期号: 12
作者:  Yu, Jiahuan;  Xu, Mengke;  Liang, Lingyan;  Guan, Min;  Zhang, Yang
收藏  |  浏览/下载：49/0  |  提交时间：2020/12/16
Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures 期刊论文
CHINESE PHYSICS B, 2019, 卷号: 28, 期号: 5
作者:  Tian, Zhi-Feng;  Xu, Peng;  Yu, Yao;  Sun, Jian-Dong;  Feng, Wei
收藏  |  浏览/下载：55/0  |  提交时间：2019/12/26
Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1236-1242
作者:  Hongliang Zhao;  Lin-An Yang;  Hao Zou;  Xiao-hua Ma;  Yue Hao
收藏  |  浏览/下载：35/0  |  提交时间：2019/12/17
Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 卷号: 430, 页码: 59-63
作者:  Hu, P. P.;  Liu, J.;  Zhang, S. X.;  Maaz, K.;  Zeng, J.
收藏  |  浏览/下载：26/0  |  提交时间：2018/10/08
Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 4
作者:  Li, Jin-Lun;  Cui, Shao-Hui;  Xu, Jian-Xing;  Cui, Xiao-Ran;  Guo, Chun-Yan
收藏  |  浏览/下载：39/0  |  提交时间：2018/05/14
TCAD Simulation for nonresonant terahertz detector based on double-channel GaN/AlGaN high-electron-mobility transistor 期刊论文
IEEE Transactions on Electron Devices, 2018, 卷号: 65, 页码: 4807-4813
作者:  Meng, Qingzhi;  Lin, Qijing;  Jing, Weixuan;  Han, Feng;  Zhao, Man
收藏  |  浏览/下载：44/0  |  提交时间：2019/11/19
X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7451-7454
作者:  Wang, Quan;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Jiang, Lijuan
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11
Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
作者:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.
收藏  |  浏览/下载：6/0  |  提交时间：2019/09/17
Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications 期刊论文
Rsc Advances, 2017, 卷号: 7, 期号: 88
作者:  Ding, X. Z.;  B. Miao;  Z. Q. Gu;  B. J. Wu;  Y. M. Hu
收藏  |  浏览/下载：12/0  |  提交时间：2018/06/13
Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 3515-3518
作者:  Sun, Ruize;  Liang, Yung C.;  Yeo, Yee-Chia;  Zhao, Cezhou
收藏  |  浏览/下载：4/0  |  提交时间：2019/11/26

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