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	X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power
	Wang, Quan; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Jiang, Lijuan; Feng, Chun; Liu, Fengqi; Xu, Xiangang; Wang, Zhanguo
刊名	JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
	2018
卷号	18期号:11页码:7451-7454
关键词	X-Band GaN HEMT Power Amplifier
DOI	10.1166/jnn.2018.16075
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4567924
专题	山东大学
作者单位	1.Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China. 2.[Wang, Quan 3.Wang, Xiaoliang 4.Xiao, H
推荐引用方式 GB/T 7714	Wang, Quan,Wang, Xiaoliang,Xiao, Hongling,et al. X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2018,18(11):7451-7454.
APA	Wang, Quan.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Jiang, Lijuan.,...&Wang, Zhanguo.(2018).X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,18(11),7451-7454.
MLA	Wang, Quan,et al."X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 18.11(2018):7451-7454.

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