CORC

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CORC

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Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth 期刊论文
NANOMATERIALS, 8, 2023, 卷号: 13, 页码: 1382
作者:  Peng Q(彭庆);  Ma ZW(马知未);  Cai, Shixian;  Zhao S(赵帅);  Chen, Xiaojia
收藏  |  浏览/下载：10/0  |  提交时间：2023/06/15
Point defects in group III nitrides: A comparative first-principles study 期刊论文
JOURNAL OF APPLIED PHYSICS, 2019, 卷号: 125
作者:  Gao, Yinlu;  Sun, Dan;  Jiang, Xue;  Zhao, Jijun
收藏  |  浏览/下载：81/0  |  提交时间：2019/12/02
Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1236-1242
作者:  Hongliang Zhao;  Lin-An Yang;  Hao Zou;  Xiao-hua Ma;  Yue Hao
收藏  |  浏览/下载：35/0  |  提交时间：2019/12/17
Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si 期刊论文
ACS Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704
作者:  Feng, Meixin;  Li, Zengcheng;  Wang, Jin;  Zhou, Rui;  Sun, Qian
收藏  |  浏览/下载：2/0  |  提交时间：2019/09/17
Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs 期刊论文
IEEE Transactions on Electron Devices, 2017, 卷号: Vol.64 No.8, 页码: 3139-3144
作者:  Li, Y;  Guo, YX;  Zhang, K;  Zou, XM;  Wang, JL
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/31
Positive Shift in Threshold Voltage Induced by CuO and NiOₓ Gate in AlGaN/GaN HEMTs 期刊论文
IEEE Transactions on Electron Devices, 2017, 页码: 1-6
作者:  Yi Li;  Yaxiong Guo;  Kai Zhang;  Xuming Zou;  Jingli Wang
收藏  |  浏览/下载：15/0  |  提交时间：2019/12/31
Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2016, 卷号: 122, 期号: 9
作者:  Liang, F;  Chen, P;  Zhao, DG;  Jiang, DS;  Zhao, ZJ
收藏  |  浏览/下载：18/0  |  提交时间：2017/03/11
Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC 期刊论文
CHEMICAL PHYSICS LETTERS, 2016, 卷号: 651
作者:  Liang, F;  Chen, P;  Zhao, DG;  Jiang, DS;  Liu, ZS
收藏  |  浏览/下载：16/0  |  提交时间：2017/03/11
Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 卷号: 27, 期号: 2
作者:  Dai, YQ;  Li, SM;  Gao, HW;  Wang, WH;  Sun, Q(孙钱)
收藏  |  浏览/下载：18/0  |  提交时间：2017/03/11
Quasi-transverse optical phonon mode in self-generated semipolar AlN grains embedded in c-oriented AlN matrix grown on sapphire using hydride vapor phase epitaxy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2016, 卷号: 119, 期号: 20
作者:  Hu, YY(胡匀匀);  Zhou, TF(周桃飞);  Zheng, SN(郑树楠);  Liu, XH(刘雪华);  Zhao, JJ
收藏  |  浏览/下载：71/0  |  提交时间：2017/03/11

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