| Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs | |
| Li, Y; Guo, YX; Zhang, K; Zou, XM; Wang, JL; Kong, YC; Chen, TS; Jiang, CZ; Fang, GJ; Liu, CS | |
| 刊名 | IEEE Transactions on Electron Devices
 |
| 2017 | |
| 卷号 | Vol.64 No.8页码:3139-3144 |
| 关键词 | Logic gates HEMTs MODFETs Aluminum gallium nitride Wide band gap semiconductors Threshold voltage AlGaN/GaN CUO gate NiOₓ gate p-type metal oxide threshold voltage |
| ISSN号 | 0018-9383;1557-9646 |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6044505 |
| 专题 | 湖南大学 |
| 作者单位 | 1.Wuhan Univ, Sch Phys & Technol, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Hubei, Peoples R China 2.Nanjing Elect Device Inst, Sci & Technol Monolith Integrated Circuits & Modu, Nanjing 210016, Jiangsu, Peoples R China 3.Hunan Univ, Key Lab Micro Nanooptoelect Devices, Minist Educ, Sch Phys & Elect, Changsha 410082, Hunan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Y,Guo, YX,Zhang, K,et al. Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs[J]. IEEE Transactions on Electron Devices,2017,Vol.64 No.8:3139-3144. |
| APA | Li, Y.,Guo, YX.,Zhang, K.,Zou, XM.,Wang, JL.,...&Liu, CS.(2017).Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs.IEEE Transactions on Electron Devices,Vol.64 No.8,3139-3144. |
| MLA | Li, Y,et al."Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs".IEEE Transactions on Electron Devices Vol.64 No.8(2017):3139-3144. |
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