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	Point defects in group III nitrides: A comparative first-principles study
	Gao, Yinlu; Sun, Dan; Jiang, Xue; Zhao, Jijun
刊名	JOURNAL OF APPLIED PHYSICS
	2019
卷号	125
关键词	Aluminum nitride Binary alloys Calculations Density functional theory Energy gap Gallium nitride III-V semiconductors Nitrides Point defects Semiconductor devices Semiconductor doping Time varying systems, Defect configurations Diffusion properties Donor and acceptor First-principles study Migration barriers Native point defects Self-compensation effects Wide-bandgap semiconductor devices, Wide band gap semiconductors
ISSN号	0021-8979
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3216136
专题	大连理工大学
作者单位	Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China.
推荐引用方式 GB/T 7714	Gao, Yinlu,Sun, Dan,Jiang, Xue,et al. Point defects in group III nitrides: A comparative first-principles study[J]. JOURNAL OF APPLIED PHYSICS,2019,125.
APA	Gao, Yinlu,Sun, Dan,Jiang, Xue,&Zhao, Jijun.(2019).Point defects in group III nitrides: A comparative first-principles study.JOURNAL OF APPLIED PHYSICS,125.
MLA	Gao, Yinlu,et al."Point defects in group III nitrides: A comparative first-principles study".JOURNAL OF APPLIED PHYSICS 125(2019).

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