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	Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications
	Sun, Ruize; Liang, Yung C.; Yeo, Yee-Chia; Zhao, Cezhou
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2017
卷号	64页码:3515-3518
关键词	high-temperature operation AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) power converter control embedded current sensor
ISSN号	0018-9383
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2949348
专题	西安交通大学
推荐引用方式 GB/T 7714	Sun, Ruize,Liang, Yung C.,Yeo, Yee-Chia,et al. Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2017,64:3515-3518.
APA	Sun, Ruize,Liang, Yung C.,Yeo, Yee-Chia,&Zhao, Cezhou.(2017).Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications.IEEE TRANSACTIONS ON ELECTRON DEVICES,64,3515-3518.
MLA	Sun, Ruize,et al."Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications".IEEE TRANSACTIONS ON ELECTRON DEVICES 64(2017):3515-3518.

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