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Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs
期刊论文
MICROELECTRONICS RELIABILITY, 2023, 卷号: 149
作者:
Yu, Cheng-hao
;
Guo, Hao-min
;
Liu, Yan
;
Wu, Xiao-dong
;
Zhang, Li-long
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2023/11/10
Depletion-mode
Single-event burnout (SEB)
Single-event gate rupture
Oxygen vacancies and local amorphization introduced by high fluence neutron irradiation in β-Ga
2
O
3
power diodes
期刊论文
APPLIED PHYSICS LETTERS, 2023, 卷号: 123
作者:
Liu, Jinyang
;
Han, Zhao
;
Ren, Lei
;
Yang, Xiao
;
Xu, Guangwei
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2023/11/10
The lubrication regimes and transition laws of gallium liquid-metal
期刊论文
Tribology International, 2023, 卷号: 188, 期号: 2023, 页码: 108838
作者:
Guo Jie
;
Si Yanxin
;
Liu Qiang
;
Cao Xinjian
;
Cheng Jun
收藏
  |  
浏览/下载:1/0
  |  
提交时间:2023/12/12
Gallium-based liquid metal
Boundary lubrication
Mixed Lubrication
Stribeck curve
Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth
期刊论文
NANOMATERIALS, 8, 2023, 卷号: 13, 页码: 1382
作者:
Peng Q(彭庆)
;
Ma ZW(马知未)
;
Cai, Shixian
;
Zhao S(赵帅)
;
Chen, Xiaojia
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2023/06/15
AlGaN thin film
molecular dynamics simulations
laser annealing
atomistic structure
First-principles study of He retention and clustering in Al-Ga alloy
期刊论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS C, 2022
作者:
Wei, Liuming
;
Li, Jingyu
;
Li, Yonggang
;
Ye, Xiaoqiu
;
Niu, Caoping
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2022/12/23
He ion-irradiation
Al-Ga alloy
first-principles
He clusters
Phases transition, component variation and valence of Tb element during terbium gallium garnet polycrystalline synthesization
期刊论文
JOURNAL OF SOLID STATE CHEMISTRY, 2022, 卷号: 315
作者:
Zhang, Haotian
;
Chen, Yingying
;
Gao, Yuxi
;
He, Yi
;
Sun, Guihua
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2022/12/22
TGG
Solid state reaction
Phase transition
XPS
The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain
期刊论文
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2022, 卷号: 284
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Guo, Xin
;
Ren, Junqiang
;
Xue, Hongtao
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2022/08/09
Binding energy
Calculations
Gallium compounds
Graphene
Ground state
Heterojunctions
III-V semiconductors
Ohmic contacts
Schottky barrier diodes
Strain
Thermoelectric equipment
Van der Waals forces
Electronic characteristics
Graphene/GaP
In-plane strains
Interlayer coupling
Layer-spacing
Micro/nano
Nanoelectronic devices
P-type
Schottky barriers
Schottky contacts
Insight into electronic structure and photocatalytic character of GaSe/MoS2 heterostructure by first-principles investigation
期刊论文
Solid State Communications, 2022, 卷号: 353
作者:
Lu, Xuefeng
;
Cui, Tingshu
;
Ren, Junqiang
;
Guo, Xin
;
Xue, Hongtao
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2022/08/09
Binding energy
Calculations
Energy gap
Gallium compounds
Hydrogen production
Lattice mismatch
Layered semiconductors
Light
Light absorption
Molybdenum compounds
Photocatalytic activity
Redox reactions
Selenium compounds
Semiconductor quantum wells
Electronic.structure
First principle calculations
First principles
First-principles investigations
Gase/MoS2
Photo-catalytic
Photocatalytic character
Photocatalytic property
Structure property
Two-dimensional
A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates
期刊论文
Vacuum, 2022, 卷号: 201
作者:
Wang, Xiaoye
;
Bai, Xue
;
Yang, Xiaoguang
;
Du, Wenna
;
Yang, Tao
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2022/06/20
Crystal defects
Gallium alloys
III-V semiconductors
Indium alloys
Metallorganic chemical vapor deposition
Morphology
Nanowires
Semiconducting indium gallium arsenide
Semiconductor alloys
Silicon
Substrates
Growth morphology
High-temperature annealing
Inas nanowire
Metal-organic chemical vapour depositions
Optimisations
Parasitic island
Parasitics
Si substrates
Substrate surface
Treatment methods
Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe
期刊论文
COMMUNICATIONS PHYSICS, 2022, 卷号: 5, 期号: 1, 页码: 7
作者:
Lai, Kang
;
Ju, Sailong
;
Zhu, Hongen
;
Wang, Hanwen
;
Wu, Hongjian
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2022/07/14
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