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Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017
Zhang, Letao; Zhou, Xiaoliang; Chang, Baozhu; Wang, Longyan; Xiao, Yuxiang; He, Hongyu; Zhang, Shengdong
收藏  |  浏览/下载：7/0  |  提交时间：2017/12/03
Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhang, Letao; Zhou, Xiaoliang; Yang, Huan; He, Hongyu; Wang, Longyan; Zhang, Min; Zhang, Shengdong
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
FOI FinFET with Ultra-low Parasitic Resistance Enabled by Fully Metallic Source and Drain Formation on Isolated Bulk-Fin 会议论文
作者:  Wu ZH(吴振华);  Luo J(罗军);  Meng LK(孟令款);  Zhang QZ(张青竹);  Li YD(李昱东)
收藏  |  浏览/下载：32/0  |  提交时间：2017/05/19
Sn-doped ZnO thin-film transistors with AZO, TZO and Al heterojunction source/drain contacts 期刊论文
ELECTRONICS LETTERS, 2016
Zhang, Yi; Han, Dedong; Huang, Lingling; Dong, Junchen; Cong, Yingying; Cui, Guodong; Zhang, Xiaomi; Zhang, Xing; Zhang, Shengdong; Wang, Yi
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
半导体器件及其制造方法 专利
专利号: US9012965, 申请日期: 2015-04-21, 公开日期: 2012-07-19
作者:  罗军;  赵超
收藏  |  浏览/下载：12/0  |  提交时间：2016/09/19
半导体器件及其制造方法 专利
专利号: US8710556, 申请日期: 2014-04-29, 公开日期: 2011-07-07
作者:  尹海洲;  梁擎擎;  骆志炯;  朱慧珑
收藏  |  浏览/下载：15/0  |  提交时间：2015/05/28
A novel method for measuring parasitic resistance in high electron mobility transistors 期刊论文
固体电子学, 2014
Yang, Zhen; Wang, Jinyan; Li, Xiaoping; Zhang, Bo; Zhao, Jian; Xu, Zhe; Wang, Maojun; Yu, Min; Yang, Zhenchuan; Wu, Wengang; Zhang, Yuming; Zhang, Jincheng; Ma, Xiaohua; Hao, Yue
收藏  |  浏览/下载：6/0  |  提交时间：2015/11/10
Predictive 3-D Modeling of Parasitic Gate Capacitance in Gate-all-Around Cylindrical Silicon Nanowire MOSFETs 期刊论文
ieee电子器件汇刊, 2011
Zou, Jibin; Xu, Qiumin; Luo, Jieying; Wang, Runsheng; Huang, Ru; Wang, Yangyuan
收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10
New Observations and Impacts of Diameter-Dependent Annealing Effects in Silicon Nanowire Transistors 其他
2011-01-01
Wang, Runsheng; Yu, Tao; Huang, Ru; Ding, Wei; Wang, Yangyuan
收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13
New observations and impacts of diameter-dependent annealing effects in silicon nanowire transistors 期刊论文
Japanese Journal of Applied Physics, 2011
Wang, Runsheng; Yu, Tao; Huang, Ru; Ding, Wei; Wang, Yangyuan
收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03

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