半导体器件及其制造方法 | |
尹海洲; 梁擎擎; 骆志炯; 朱慧珑 | |
2014-04-29 | |
著作权人 | 中国科学院微电子研究所 |
专利号 | US8710556 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | The present application discloses a semiconductor device comprising a fin of semiconductive material formed from a semiconductor layer over a semiconductor substrate and having two opposing sides perpendicular to the main surface of the semiconductor substrate; a source region and a drain region provided in the semiconductor substrate adjacent to two ends of the fin and being bridged by the fin; a channel region provided at the central portion of the fin; and a stack of gate dielectric and gate conductor provided at one side of the fin, where the gate conductor is isolated from the channel region by the gate dielectric, and wherein the stack of gate dielectric and gate conductor extends away from the one side of the fin in a direction parallel to the main surface of the semiconductor substrate, and insulated from the semiconductor substrate by an insulating layer. The semiconductor device has an improved short channel effect and a reduced parasitic capacitance and resistance, which contributes to an improved electrical property and facilitates scaling down of the transistor. |
公开日期 | 2011-07-07 |
申请日期 | 2010-06-25 |
语种 | 中文 |
内容类型 | 专利 |
源URL | [http://10.10.10.126/handle/311049/13302] |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 尹海洲,梁擎擎,骆志炯,等. 半导体器件及其制造方法. US8710556. 2014-04-29. |
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