Source-drain resistance characteristics of back-channel etched amorphous   InGaZnO thin film transistors with TiO2:Nb protective layer

doi:10.1016/j.mssp.2017.04.020

CORC > 北京大学 > 信息科学技术学院

	Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer
	Zhang, Letao ; Zhou, Xiaoliang ; Chang, Baozhu ; Wang, Longyan ; Xiao, Yuxiang ; He, Hongyu ; Zhang, Shengdong
刊名	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
	2017
关键词	Amorphous indium gallium zinc oxide Thin film transistors Source-drain parasitic resistance TiO2:Nb Films thickness THRESHOLD VOLTAGE ANATASE TIO2 PERFORMANCE SHIFT TFTS
DOI	10.1016/j.mssp.2017.04.020
英文摘要	This work investigates the source-drain (S-D) parasitic resistance (R-SD) characteristics of the back-channeletched (BCE) a-IGZO TFTs with ultra-thin Nb doped TiO2 (TNO) protective layer. It is shown that R-SD is strongly related to the thickness of the TNO protective layer although the electrical performances of the BCE a-IGZO TFTs with different TNO thickness are similar to each other. The BCE TFT with 3 nm TNO shows an unusually large R-SD value (300 Omega cm). It is suggested that a similar to 3 nm TNO depletion layer should be formed at the TNO/a-IGZO interface in the S-D region in this case. In addition, R-SD of the BCE TFTs with 1 and 5 nm TNO is 11 and 26 Omega cm, respectively. The low R-SD of these two devices is caused by much thinner TNO depletion layers in the S-D region. Besides, a moderate R-SD of 53 Omega cm for the S-D lift-off device can be ascribed to a lower a-IGZO band bending at the Mo/a-IGZO interface than that of the BCE devices at the TNO/a-IGZO interface.; NSFC [61574003]; Shenzhen Municipal Scientific Program [JCYJ20160510144204207, JSGG20150331101105708]; Guangdong Scientific Program [2014B050505005, 2016A030313382]; SCI(E); ARTICLE; 147-151; 68
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/471299]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Letao,Zhou, Xiaoliang,Chang, Baozhu,et al. Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2017.
APA	Zhang, Letao.,Zhou, Xiaoliang.,Chang, Baozhu.,Wang, Longyan.,Xiao, Yuxiang.,...&Zhang, Shengdong.(2017).Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING.
MLA	Zhang, Letao,et al."Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2017).