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Carrier Trapping in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory 期刊论文
ACS NANO, 2022, 卷号: 16, 期号: 4, 页码: 6309-6316
作者:  Zhang, Rongjie;  Lai, Yongjue;  Chen, Wenjun;  Teng, Changjiu;  Sun, Yujie
收藏  |  浏览/下载:13/0  |  提交时间:2022/09/16
Non-volatility using materials with only volatile properties: Vertically integrated magnetoelectric heterostructures and their potential for multi-level-cell devices 期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: 114, 期号: 24
作者:  Tang, Xiao;  Gao, Min;  Leung, Chung Ming;  Luo, Haosu;  Li, Jiefang
收藏  |  浏览/下载:35/0  |  提交时间:2019/12/26
Light assisted multilevel resistive switching memory devices based on all-inorganic perovskite quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: Vol.114 No.18
作者:  Chen, Z.a;  Zhang, Y.a;  Yu, Y.a;  Cao, M.a;  Che, Y.a
收藏  |  浏览/下载:10/0  |  提交时间:2019/11/21
Light-controlled resistive switching and voltage-controlled photoresponse characteristics in the Pt/CeO2/Nb:SrTiO3 heterostructure 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778
作者:  Xie, Shuai;  Pei, Ling;  Li, Meiya;  Zhu, Yongdan;  Cheng, Xiangyang
收藏  |  浏览/下载:42/0  |  提交时间:2019/12/05
Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization 期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2019, 卷号: 29, 期号: 2
作者:  Zhong, Hai;  Wen, Yan;  Zhao, Yuelei;  Zhang, Qiang;  Huang, Qikun
收藏  |  浏览/下载:78/0  |  提交时间:2019/12/11
One-Transistor Memory Compatible with Si-Based Technology with Multilevel Applications 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 8
作者:  Dai, Mingzhi;  Yang, Wenwei;  Li, Ming;  Zhang, Lei;  Huo, Changhe
收藏  |  浏览/下载:27/0  |  提交时间:2019/12/18
Analysis of tail bits generation of multilevel storage in resistive switching memory 期刊论文
Chinese Physics B, 2018
作者:  Liu J(刘璟);  Xu XX(许晓欣);  Chen CB(陈传兵);  Gong TC(龚天成);  Yu ZA(余兆安)
收藏  |  浏览/下载:50/0  |  提交时间:2019/04/12
A MULTILEVEL CORRECTION TYPE OF ADAPTIVE FINITE ELEMENT METHOD FOR EIGENVALUE PROBLEMS 期刊论文
SIAM JOURNAL ON SCIENTIFIC COMPUTING, 2018, 卷号: 40, 期号: 6, 页码: A4208-A4235
作者:  Hong, Qichen;  Xie, Hehu;  Xu, Fei
收藏  |  浏览/下载:21/0  |  提交时间:2019/03/05
Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiOx Modulated by Moisture 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 1700567
作者:  Zhou, Guangdong;  Duan, Shukai;  Li, Ping;  Sun, Bai;  Wu, Bo
收藏  |  浏览/下载:30/0  |  提交时间:2019/03/29
Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization 期刊论文
Advanced Functional Materials, 2018
作者:  Zhong H.;  Wen Y.;  Zhao Y.;  Zhang Q.;  Huang Q.
收藏  |  浏览/下载:9/0  |  提交时间:2019/12/11


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