One-Transistor Memory Compatible with Si-Based Technology with Multilevel Applications

doi:10.1002/aelm.201900262

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2019专题

	One-Transistor Memory Compatible with Si-Based Technology with Multilevel Applications
	Dai, Mingzhi ; Yang, Wenwei ; Li, Ming ; Zhang, Lei ; Huo, Changhe ; Dong, Yemin ; Webster, Thomas J.
刊名	ADVANCED ELECTRONIC MATERIALS
	2019
卷号	5 期号:8
关键词	CATALYST
DOI	10.1002/aelm.201900262
英文摘要	One-Transistor Memory Compatible with Si-Based Technology with Multilevel Applications
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/18107]
专题	2019专题
作者单位	1.Dong, YM (reprint author), Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 201433, Peoples R China. 2.Webster, TJ (reprint author), Northeastern Univ, Dept Chem Engn, 313 Snell Engn Ctr,360 Huntington Ave, Boston, MA 02115 USA. 3.Dai, MZ (reprint author), Chinese Acad Sci, Ningbo Inst Mat & Technol Engn, 1219 Zhongguan Xi Rd, Ningbo 315201, Zhejiang, Peoples R China.
推荐引用方式 GB/T 7714	Dai, Mingzhi,Yang, Wenwei,Li, Ming,et al. One-Transistor Memory Compatible with Si-Based Technology with Multilevel Applications[J]. ADVANCED ELECTRONIC MATERIALS,2019,5(8).
APA	Dai, Mingzhi.,Yang, Wenwei.,Li, Ming.,Zhang, Lei.,Huo, Changhe.,...&Webster, Thomas J..(2019).One-Transistor Memory Compatible with Si-Based Technology with Multilevel Applications.ADVANCED ELECTRONIC MATERIALS,5(8).
MLA	Dai, Mingzhi,et al."One-Transistor Memory Compatible with Si-Based Technology with Multilevel Applications".ADVANCED ELECTRONIC MATERIALS 5.8(2019).