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	Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization
	Zhong H.; Wen Y.; Zhao Y.; Zhang Q.; Huang Q.; Chen Y.; Cai J.; Zhang X.; 等 更多
刊名	Advanced Functional Materials
	2018
关键词	magnetic tunneling junctions magnetoresistance multilevel states nonvolatile memory remanent magnetization
DOI	10.1002/adfm.201806460
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4571072
专题	山东大学
作者单位	School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, China, Physical Science and Engineering (
推荐引用方式 GB/T 7714	Zhong H.,Wen Y.,Zhao Y.,et al. Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization[J]. Advanced Functional Materials,2018.
APA	Zhong H..,Wen Y..,Zhao Y..,Zhang Q..,Huang Q..,...&等 更多.(2018).Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization.Advanced Functional Materials.
MLA	Zhong H.,et al."Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization".Advanced Functional Materials (2018).

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