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| Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者: Wang C
  收藏 | 浏览/下载：69/3 | 提交时间：2011/07/05
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| Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文
applied physics a-materials science & processing, 2011, 卷号: 103, 期号: 4, 页码: 1099-1103
作者: Wei HY
收藏 | 浏览/下载：59/8 | 提交时间：2011/07/05
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| Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure 期刊论文
materials research bulletin, 2011, 卷号: 46, 期号: 2, 页码: 262-265
作者: Xue CL
收藏 | 浏览/下载：64/4 | 提交时间：2011/07/05
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| Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者: Duan RF
收藏 | 浏览/下载：90/4 | 提交时间：2011/07/05
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| Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者: Shi K; Jiao CM; Song HP
收藏 | 浏览/下载：94/7 | 提交时间：2011/07/05
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| The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者: Song HP; Shi K; Sang L; Wei HY
收藏 | 浏览/下载：58/3 | 提交时间：2011/07/05
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| Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者: Pan X
收藏 | 浏览/下载：20/0 | 提交时间：2011/09/14
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| Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan)
收藏 | 浏览/下载：41/0 | 提交时间：2010/12/28
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| Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804
Lu GJ (Lu Guo-Jun); Zhu JJ (Zhu Jian-Jun); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui)
收藏 | 浏览/下载：110/2 | 提交时间：2010/04/22
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| Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307
作者: Zhang SM; Wang LJ; Wang YT; Yang H; Wang LJ
收藏 | 浏览/下载：117/3 | 提交时间：2010/04/05
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