The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD

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	The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
	Song HP; Shi K; Sang L; Wei HY
刊名	journal of crystal growth
	2011
卷号	314 期号:1 页码:39-42
关键词	Metal organic chemical vapor deposition Sapphire Zinc compounds Semiconducting II-VI materials VAPOR-PHASE EPITAXY OPTICAL-PROPERTIES ZNO NANORODS RAMAN-SCATTERING M-PLANE FILMS PHOTOLUMINESCENCE DEPOSITION NANOWIRES FIELDS
ISSN号	0022-0248
通讯作者	shi, k, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. shikai@semi.ac.cn ; xlliu@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	863 high technology r&d program of china [2007aa03z402, 2007aa03z451]; special funds for major state basic research project (973 program) of china [2006cb604907]; national science foundation of china [60506002, 60776015]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	polar and non-polar znmgo were synthesized on different crystallographic planes (c-, r- and m-planes) of sapphire (al2o3) substrates by metal organic chemical vapor deposition, respectively. under the same experimental condition, polar znmgo nanorods were obtained on c-al2o3 substrate whereas non-polar znmgo thin films were obtained on r- and m-al2o3 substrates. the surface morphology was significantly influenced by the competition of the preferable growth directions on different sapphire substrates. on c-al2o3 substrate, znmgo nanorods were vertically well-aligned with typical lengths in the range 330-360 nm. on r- and m-al2o3 substrates, however, znmgo thin films with flat surfaces were obtained, whose thickness were 150 and 20 nm, respectively. under the same condition, the c-znmgo deposited on c-al2o3 substrate has the maximum growth velocity (11 nm/nim), followed by a-znmgo deposited on r-al2o3 substrate (5 nm/min), and the m-znmgo deposited on m-al2o3 substrate has the minimum one (0.67 nm/min). the near-band-edge (nbe) emission in photoluminescence (pl) spectra shows a clear blueshift and a slight broadening compared with that of pure zno samples, which suggest that the mg content has successfully incorporated into zno. the different energy blueshifts (67 mev and 98 mev) of the nbe emission demonstrate that a-znmgo deposited on r-al2o3 substrate has higher mg incorporation efficiency than c-znmgo on c-al2o3 substrate. (c) 2010 elsevier b.v. all rights reserved.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21313]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Song HP,Shi K,Sang L,et al. The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD[J]. journal of crystal growth,2011,314(1):39-42.
APA	Song HP,Shi K,Sang L,&Wei HY.(2011).The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD.journal of crystal growth,314(1),39-42.
MLA	Song HP,et al."The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD".journal of crystal growth 314.1(2011):39-42.