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	Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field 期刊论文 Nanoscale Research Letters, 2019, 卷号: 14, 期号: 1 作者: Li,Dabing; Feng,Zhe Chuan; Luo,Xuguang; Wang,Yong; Kai,Cuihong 收藏 \| 浏览/下载：117/0 \| 提交时间：2019/08/21 Refractive index AlN Threading dislocation density Nanoscale strain field around dislocations
	Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure 期刊论文 Applied Surface Science, 2015, 卷号: 356, 期号: 30, 页码: 1052-1057 作者: Lin Ye; Miao Zhang; Zengfeng Di; Zhongyin Xue; Jianhong Yang 收藏 \| 浏览/下载：4/0 \| 提交时间：2015/10/09 Defect density Condensation Defects Dislocations (crystals) Germanium Hole mobility Interfaces (materials) Semiconductor insulator boundaries Silicon alloys Silicon wafers Density of defects Ge condensation Ge on insulators Low defect densities SiGe-on-insulator structures Threading dislocation Threading dislocation densities Wafer manufacturing
	The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD 期刊论文 Journal of Semiconductors, 2013, 卷号: 34, 期号: [db:dc_citation_issue] 作者: Liang, Jing; Hongling, Xiao; Xiaoliang, Wang; Cuimei, Wang; Qingwen, Deng 收藏 \| 浏览/下载：8/0 \| 提交时间：2019/12/10 Dislocation densities GaN High resolution X ray diffraction Metal-organic Non-radiative recombinations Patterned sapphire substrate Sapphire substrates Threading dislocation
	Epitaxial Growth of Germanium on Silicon for Light Emitters 期刊论文 http://dx.doi.org/10.1155/2012/768605, 2012 Chen, Chengzhao; Li, Cheng; Huang, Shihao; Zheng, Yuanyu; Lai, Hongkai; Chen, Songyan; 李成收藏 \| 浏览/下载：3/0 \| 提交时间：2013/12/12 CHEMICAL-VAPOR-DEPOSITION HIGH-QUALITY GE THREADING-DISLOCATION DENSITIES MOLECULAR-BEAM EPITAXY ROOM-TEMPERATURE SI LAYERS INTEGRATION TRANSISTORS INSULATOR
	Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template 期刊论文 http://dx.doi.org/10.1016/j.tsf.2011.09.023, 2012 Huang, Shihao; Li, Cheng; Zhou, Zhiwen; Chen, Chengzhao; Zheng, Yuanyu; Huang, Wei; Lai, Hongkai; Chen, Songyan; 陈松岩收藏 \| 浏览/下载：1/0 \| 提交时间：2013/12/12 THREADING-DISLOCATION DENSITIES CHEMICAL-VAPOR-DEPOSITION LAYERS GROWTH REDUCTION SILICON FILMS PHOTODETECTORS SURFACTANT GERMANIUM
	Epitaxial Growth of Germanium on Silicon for Light Emitters 期刊论文 http://dx.doi.org/10.1155/2012/768605, 2012 Chen, Chengzhao; Li, Cheng; Huang, Shihao; Zheng, Yuanyu; Lai, Hongkai; Chen, Songyan; 陈松岩收藏 \| 浏览/下载：2/0 \| 提交时间：2013/12/12 CHEMICAL-VAPOR-DEPOSITION HIGH-QUALITY GE THREADING-DISLOCATION DENSITIES MOLECULAR-BEAM EPITAXY ROOM-TEMPERATURE SI LAYERS INTEGRATION TRANSISTORS INSULATOR
	Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template 期刊论文 http://dx.doi.org/10.1016/j.tsf.2011.09.023, 2012 Huang, Shihao; Li, Cheng; Zhou, Zhiwen; Chen, Chengzhao; Zheng, Yuanyu; Huang, Wei; Lai, Hongkai; Chen, Songyan; 李成收藏 \| 浏览/下载：3/0 \| 提交时间：2013/12/12 THREADING-DISLOCATION DENSITIES CHEMICAL-VAPOR-DEPOSITION LAYERS GROWTH REDUCTION SILICON FILMS PHOTODETECTORS SURFACTANT GERMANIUM
	Thermal stability of SiGe films on an ultra thin Ge buffer layer on Si grown at low temperature 期刊论文 2010 LiCheng; 李成; LaiHongkai; 赖虹凯; ChenSongyan; 陈松岩收藏 \| 浏览/下载：3/0 \| 提交时间：2011/04/26 Thermal stability SiGe LT-Ge Strain relaxation
	Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307 作者: Zhang SM; Wang LJ; Wang YT; Yang H; Wang LJ 收藏 \| 浏览/下载：107/3 \| 提交时间：2010/04/05 GaN light emitting diode surface treatment leakage current THREADING DISLOCATION DENSITIES LAYERS NI/AU LEDS
	AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template 期刊论文 2009 Yang,WH; Li,SP; Zhang,GY; Chen,HY; Shen,B; Xu,ZY; Zhang,YZ; Kang,JY; Sang,LW; Li,T; Yang,ZJ; Qin,ZX; Liu,DY; Fang,H; 李书平收藏 \| 浏览/下载：4/0 \| 提交时间：2013/12/12 285 NM EMISSION

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