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Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2021, 卷号: 7, 期号: 5, 页码: -
作者:
Shih, Yu-Chuan
;
Lee, Ling
;
Liang, Kai-De
;
Manikandan, Arumugam
;
Liu, Wen-Wu
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2021/03/12
Copper
Copper oxides
Nanocrystalline materials
Nanowires
Oxide minerals
RRAM
Single crystals
Fabrication process
High current densities
Random access memory
Resistive switching
Resistive switching memory
Switching behaviors
Switching mechanism
Switching properties
Sub-nanosecond pulse programming and device design strategy for analog resistive switching in HfOx-based resistive random access memory
期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: 114
作者:
Hang, Cheng-Zhou
;
Wang, Chen
;
Gao, Bin
;
Chen, Huan
;
Xu, Ming-Hong
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/12/02
Electric breakdown
Energy utilization
Hafnium compounds
Integrated circuit design
Intelligent systems
Monte Carlo methods
RRAM, Kinetic monte carlo simulation
Microscopic distribution
Neuromorphic computing
Resistive random access memory
Resistive random access memory (rram)
Resistive switching
Sub-nanosecond pulse
Thermal conductance, Switching
Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering
期刊论文
NANOTECHNOLOGY, 2017
Wang, Zongwei
;
Kang, Jian
;
Yu, Zhizhen
;
Fang, Yichen
;
Ling, Yaotian
;
Cai, Yimao
;
Huang, Ru
;
Wang, Yangyuan
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
interface engineering
nonvolatile memory
resistive random access memory (RRAM)
resistive switching
nonlinearity
tantalum oxide
BIPOLAR RRAM
THIN-FILM
MEMORY
MECHANISM
ARCHITECTURE
CHALLENGES
ARRAY
MEMRISTOR
BILAYER
Tunable defect engineering in TiON thin films by multi-step sputtering processes: From a Schottky diode to resistive switching memory
期刊论文
Journal of Materials Chemistry C, 2017, 卷号: 5, 期号: 25, 页码: 6319-6327
作者:
Su, Teng-Yu
;
Huang, Chi-Hsin
;
Shih, Yu-Chuan
;
Wang, Tsang-Hsuan
;
Medina, Henry
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2020/11/14
Defects
Diodes
Rhenium compounds
RRAM
Schottky barrier diodes
Sputtering
Switching
Thin films
Titanium compounds
Conduction Mechanism
Defect distribution
Gradient distributions
Rectifying characteristics
Rectifying properties
Resistive Random Access Memory (ReRAM)
Resistive switching behaviors
Resistive switching memory
原子层沉积HfO2薄膜及其1D1R器件阻变特性研究
学位论文
2016, 2016
陆超
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2017/06/20
阻变存储器
原子层沉积
HfO2
Resistive switching random access memory (RRAM)
Atomic layer deposition (ALD)
HfO2
Metal/ZnO/MgO/Si/Metal Write-Once-Read-Many-Times Memory
期刊论文
IEEE Transactions on Electron Devices, 2016, 卷号: 63, 期号: 9, 页码: 3508-3513
作者:
Zhang, Bosen
;
Hu, Cong
;
Ren, Tianshuang
;
Wang, Bo
;
Qi, Jing
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2017/01/13
MgO
resistive random access memory (RRAM)
resistive switching (RS)
write-once-read-many-times memory (WORM)
ZnO
Modeling and Optimization of Bilayered TaOx RRAM Based on Defect Evolution and Phase Transition Effects
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016
Zhao, Yudi
;
Huang, Peng
;
Chen, Zhe
;
Liu, Chen
;
Li, Haitong
;
Chen, Bing
;
Ma, Wenjia
;
Zhang, Feifei
;
Gao, Bin
;
Liu, Xiaoyan
;
Kang, Jinfeng
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2017/12/03
Monte Carlo simulation
oxygen vacancies
phase transition (P-T)
resistive random access memory (RRAM)
resistive switching (RS)
TaOx
RESISTIVE SWITCHING MEMORIES
METAL-OXIDE RRAM
TANTALUM-PENTOXIDE
DEVICES
Physical Understanding and Optimization of Resistive Switching Characteristics in Oxide-RRAM
其他
2016-01-01
Kang, J. F.
;
Huang, P.
;
Chen, Z.
;
Zhao, Y. D.
;
Liu, C.
;
Han, R. Z.
;
Liu, L. F.
;
Liu, X. Y.
;
Wang, Y. Y.
;
Gao, B.
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
Resistive random access memory (RRAM)
switching mechanism
physical-based model
resistive switching
reliability
optimization design
MODEL
MEMORY
OPERATIONS
MECHANISM
Self-Selection RRAM Cell With Sub-mu A Switching Current and Robust Reliability Fabricated by High-K/Metal Gate CMOS Compatible Technology
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016
Huang, Peng
;
Chen, Sijie
;
Zhao, Yudi
;
Chen, Bing
;
Gao, Bin
;
Liu, Lifeng
;
Chen, Yong
;
Zhang, Ziying
;
Bu, Weihai
;
Wu, Hanming
;
Liu, Xiaoyan
;
Kang, Jinfeng
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2017/12/03
High-K/metal gate (HKMG)
nonliner
resistive random access memory (RRAM)
resistive switching
retention
ultralow switching current
OXIDE-BASED RRAM
DEVICE CHARACTERISTICS
CROSSBAR ARRAY
RESISTANCE
MODEL
All-Metal-Nitride RRAM Devices
期刊论文
ieee electron device letters, 2015
Zhang, Zhiping
;
Gao, Bin
;
Fang, Zheng
;
Wang, Xinpeng
;
Tang, Yanzhe
;
Sohn, Joon
;
Wong, H.S. Philip
;
Wong, S. Simon
;
Lo, Guo-Qiang
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2015/11/11
Aluminium nitride (AlN)
titanium nitride (TiN)
hafnium nitride (HfN)
resistive random access memory (RRAM)
bipolar switching
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