Modeling and Optimization of Bilayered TaOx RRAM Based on Defect   Evolution and Phase Transition Effects

doi:10.1109/TED.2016.2532470

CORC > 北京大学 > 信息科学技术学院

	Modeling and Optimization of Bilayered TaOx RRAM Based on Defect Evolution and Phase Transition Effects
	Zhao, Yudi ; Huang, Peng ; Chen, Zhe ; Liu, Chen ; Li, Haitong ; Chen, Bing ; Ma, Wenjia ; Zhang, Feifei ; Gao, Bin ; Liu, Xiaoyan ; Kang, Jinfeng
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2016
关键词	Monte Carlo simulation oxygen vacancies phase transition (P-T) resistive random access memory (RRAM) resistive switching (RS) TaOx RESISTIVE SWITCHING MEMORIES METAL-OXIDE RRAM TANTALUM-PENTOXIDE DEVICES
DOI	10.1109/TED.2016.2532470
英文摘要	A comprehensive physical model on the resistive switching (RS) behaviors of bilayered TaOx-based RS access memory [resistive random access memory (RRAM)] is presented. In the model, the effects of the generation and recombination (G-R) of oxygen vacancies (V-O), phase transition (P-T) between Ta2O5 and TaO2, and the interaction (I-A) between Ta2O5 and TaOx layers are involved to explain the RS behaviors based on ab initio calculations. An atomistic Monte Carlo simulation method based on the model is developed to investigate the dynamic physical processes and reproduce the experimental phenomena. The impacts of G-R and P-T as well as the I-A effects on the RS behaviors of a bilayered Ta2O5/TaOx structure and the device performances are identified. This paper indicates that the G-R effect dominates the RS behaviors, and self-compliance is due to the I-A effect. Based on the simulations, the optimization guidance of a bilayered TaOx-based RRAM is presented.; National Natural Science Foundation of China [61334007, 61421005]; SCI(E); EI; ARTICLE; zhaoyd@pku.edu.cn; phwang@pku.edu.cn; aggie_chen@pku.edu.cn; 1401111265@pku.edu.cn; haitongl@stanford.edu; bingchen@pku.edu.cn; mawenjiaxd@163.com; zhangfeifei@pku.edu.cn; gaobin@pku.edu.cn; xyliu@ime.pku.edu.cn; kangjf@pku.edu.cn; 4; 1524-1532; 63
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/437514]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhao, Yudi,Huang, Peng,Chen, Zhe,et al. Modeling and Optimization of Bilayered TaOx RRAM Based on Defect Evolution and Phase Transition Effects[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2016.
APA	Zhao, Yudi.,Huang, Peng.,Chen, Zhe.,Liu, Chen.,Li, Haitong.,...&Kang, Jinfeng.(2016).Modeling and Optimization of Bilayered TaOx RRAM Based on Defect Evolution and Phase Transition Effects.IEEE TRANSACTIONS ON ELECTRON DEVICES.
MLA	Zhao, Yudi,et al."Modeling and Optimization of Bilayered TaOx RRAM Based on Defect Evolution and Phase Transition Effects".IEEE TRANSACTIONS ON ELECTRON DEVICES (2016).