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	Physical Understanding and Optimization of Resistive Switching Characteristics in Oxide-RRAM
	Kang, J. F. ; Huang, P. ; Chen, Z. ; Zhao, Y. D. ; Liu, C. ; Han, R. Z. ; Liu, L. F. ; Liu, X. Y. ; Wang, Y. Y. ; Gao, B.
	2016
关键词	Resistive random access memory (RRAM) switching mechanism physical-based model resistive switching reliability optimization design MODEL MEMORY OPERATIONS MECHANISM
英文摘要	In this paper, the physical mechanism and models of oxide-based resistive-switching random access memory (RRAM) and the optimization of the devices and arrays are addressed and reviewed. The review focuses on our research achievements on the unified physical mechanism, physical-based models including switching and reliability behaviors, and the optimization design issues of the oxide-based RRAM.; CPCI-S(ISTP); kangjf@pku.edu.cn; 154-159
语种	英语
出处	46th European Solid-State Device Research Conference (ESSDERC) / 42nd European Solid-State Circuits Conference (ESSCIRC)
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/460137]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Kang, J. F.,Huang, P.,Chen, Z.,et al. Physical Understanding and Optimization of Resistive Switching Characteristics in Oxide-RRAM. 2016-01-01.

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