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CORC

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Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs 期刊论文
MICROELECTRONICS RELIABILITY, 2023, 卷号: 149
作者:  Yu, Cheng-hao;  Guo, Hao-min;  Liu, Yan;  Wu, Xiao-dong;  Zhang, Li-long
收藏  |  浏览/下载：11/0  |  提交时间：2023/11/10
Effect of charge coupling on breakdown voltage of high voltage trench-gate-type super barrier rectifier 期刊论文
ACTA PHYSICA SINICA, 2021, 卷号: 70
作者:  Xu Da-Lin;  Wang Yu-Qi;  Li Xin-Hua;  Shi Tong-Fei
收藏  |  浏览/下载：44/0  |  提交时间：2021/04/26
Three-Dimensional Mechanistic Modeling of Gate Leakage Current in High- κ MOSFETs 期刊论文
PHYSICAL REVIEW APPLIED, 2020, 卷号: 13, 期号: 2, 页码: 024020
作者:  Feilong Liu;   Yue-Yang Liu;   Ling Li;   Guofu Zhou;   Xiangwei Jiang;   Jun-Wei Luo
收藏  |  浏览/下载：23/0  |  提交时间：2021/11/30
Latent Reliability Degradation of Ultrathin Amorphous HfO2 Dielectric After Heavy Ion Irradiation: The Impact of Nano-Crystallization 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 10, 页码: 1634-1637
作者:  Li, Zongzhen;  Liu, Jie;  Zhai, Pengfei;  Liu, Tianqi;  Bi, Jinshun
收藏  |  浏览/下载：10/0  |  提交时间：2022/01/19
An Exact Approach to Elimination of Leakage in a Qubit Embedded in a Three-level System 期刊论文
SCIENTIFIC REPORTS, 2019, 卷号: 9, 页码: 8
作者:  Sun, Yifan;  Zhang, Jun-Yi;  Wu, Lian-Ao
收藏  |  浏览/下载：19/0  |  提交时间：2019/10/14
Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778, 期号: 无, 页码: 579-587
作者:  Wang, Die;  He, Gang;  Liang, Shuang;  Liu, Mao
收藏  |  浏览/下载：56/0  |  提交时间：2020/03/31
Modulating Electrical Performances of In2O3 Nanofiber Channel Thin Film Transistors via Sr Doping 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 3, 页码: 10
作者:  Song, Longfei;  Luo, Linqu;  Li, Xuan;  Liu, Di;  Han, Ning
收藏  |  浏览/下载：81/0  |  提交时间：2019/06/14
Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch 期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.3, 页码: 2771-2780
作者:  Jun Wang;  Xi Jiang;  Zongjian Li;  Z. John Shen
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/13
Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: Vol.40 No.2, 页码: 275-278
作者:  Ma, Jun;  Kampitsis, Georgios;  Xiang, Peng;  Cheng, Kai;  Matioli, Elison
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/13
Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer 期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: Vol.114 No.1
作者:  Zhang, Sheng;  Wei, Ke;  Ma, Xiao-Hua;  Hou, Bin;  Liu, Guo-Guo
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17

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