Modulating Electrical Performances of In2O3 Nanofiber Channel Thin Film Transistors via Sr Doping

doi:10.1002/aelm.201800707

	Modulating Electrical Performances of In2O3 Nanofiber Channel Thin Film Transistors via Sr Doping
	Song, Longfei 1,2; Luo, Linqu 1,2; Li, Xuan 1,2; Liu, Di 1,2; Han, Ning 3; Liu, Lei 4; Qin, Yuanbin 5; Ho, Johnny C.6; Wang, Fengyun 1,2
刊名	ADVANCED ELECTRONIC MATERIALS
	2019-03-01
卷号	5 期号:3 页码:10
关键词	enhancement mode high performance In2O3 nanofiber inverter Sr element
ISSN号	2199-160X
DOI	10.1002/aelm.201800707
英文摘要	Although In2O3 nanofibers (NFs) are considered as one of the fundamental building blocks for future electronics, the further development of these NFs devices is still seriously hindered by the large leakage current, low on/off current ratio (I-on/I-off), and large negative threshold voltage (V-TH) due to the excess carriers existed in the NFs. A simple one-step electrospinning process is employed here to effectively control the carrier concentration of In2O3 NFs by selectively doping strontium (Sr) element to improve their electrical device performance. The optimal devices (3.6 mol% Sr doping concentration) can yield the high field-effect mobility (mu(fe) approximate to 3.67 cm(2) V-1 s(-1)), superior I-on/I-off ratio (approximate to 10(8)), and operation in the energy-efficient enhancement-mode. High- Al2O3 thin films can also be employed as the gate dielectric to give the gate voltage greatly reduced by 10x (from 40 to 4 V) and the (fe) substantially increased by 4.8x (to 17.2 cm(2) V-1 s(-1)). The electrospun E-mode Sr-In2O3 NF field-effect transistors (NFFETs) can as well be integrated into full swing of inverters with excellent performances, further elucidating the significant advance of this electrospinning technique toward practical applications for future low-cost, energy-efficient, large-scale, and high-performance electronics.
资助项目	Natural Science Foundation of Shandong Province, China[ZR2018JL021] ; Natural Science Foundation of Shandong Province, China[ZR2014EMQ011] ; National Natural Science Foundation of China[51402160] ; National Key R&D Program of China[2016YFC0207100] ; Taishan Scholar Program of Shandong Province, China ; State Key Laboratory of Multiphase Complex Systems[MPCS-2015-A-04] ; Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences ; Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Nankai University, Tianjin, China ; General Research Fund of the Research Grants Council of Hong Kong SAR, China[CityU 11211317]
WOS关键词	METAL-OXIDE NANOWIRE ; TRANSPORT ; PHOTODETECTORS ; FABRICATION ; STORAGE
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	WILEY
WOS记录号	WOS:000461544600011
资助机构	Natural Science Foundation of Shandong Province, China ; National Natural Science Foundation of China ; National Key R&D Program of China ; Taishan Scholar Program of Shandong Province, China ; State Key Laboratory of Multiphase Complex Systems ; Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences ; Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Nankai University, Tianjin, China ; General Research Fund of the Research Grants Council of Hong Kong SAR, China
内容类型	期刊论文
源URL	[http://ir.ipe.ac.cn/handle/122111/28318]
专题	中国科学院过程工程研究所
通讯作者	Ho, Johnny C.; Wang, Fengyun
作者单位	1.Qingdao Univ, Coll Phys, Qingdao 266071, Peoples R China 2.Qingdao Univ, State Key Lab Biofibers & Ecotext, Qingdao 266071, Peoples R China 3.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China 4.Shandong Univ Sci & Technol, Sch Mat Sci & Engn, Qingdao 266590, Peoples R China 5.Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Ctr Adv Mat Performance Nanoscale, Xian 710049, Shaanxi, Peoples R China 6.City Univ Hong Kong, Dept Mat Sci & Engn, Hong Kong 999077, Peoples R China
推荐引用方式 GB/T 7714	Song, Longfei,Luo, Linqu,Li, Xuan,et al. Modulating Electrical Performances of In2O3 Nanofiber Channel Thin Film Transistors via Sr Doping[J]. ADVANCED ELECTRONIC MATERIALS,2019,5(3):10.
APA	Song, Longfei.,Luo, Linqu.,Li, Xuan.,Liu, Di.,Han, Ning.,...&Wang, Fengyun.(2019).Modulating Electrical Performances of In2O3 Nanofiber Channel Thin Film Transistors via Sr Doping.ADVANCED ELECTRONIC MATERIALS,5(3),10.
MLA	Song, Longfei,et al."Modulating Electrical Performances of In2O3 Nanofiber Channel Thin Film Transistors via Sr Doping".ADVANCED ELECTRONIC MATERIALS 5.3(2019):10.