Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer | |
Zhang, Sheng; Wei, Ke; Ma, Xiao-Hua; Hou, Bin; Liu, Guo-Guo; Zhang, Yi-chuan; Wang, Xin-Hua; Zheng, Ying-Kui; Huang, Sen; Li, Yan-Kui | |
刊名 | APPLIED PHYSICS LETTERS |
2019 | |
卷号 | Vol.114 No.1 |
ISSN号 | 0003-6951 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4744742 |
专题 | 湖南大学 |
作者单位 | 1.Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Shaanxi, Peoples R China 2.Chinese Acad Sci, Inst Microelect, High Frequency High Voltage Device & Integrated C, Beijing 100029, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang, Sheng,Wei, Ke,Ma, Xiao-Hua,et al. Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer[J]. APPLIED PHYSICS LETTERS,2019,Vol.114 No.1. |
APA | Zhang, Sheng.,Wei, Ke.,Ma, Xiao-Hua.,Hou, Bin.,Liu, Guo-Guo.,...&Li, Yan-Kui.(2019).Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer.APPLIED PHYSICS LETTERS,Vol.114 No.1. |
MLA | Zhang, Sheng,et al."Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer".APPLIED PHYSICS LETTERS Vol.114 No.1(2019). |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论