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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05
Optical and electrical characteristics of GaN vertical light emitting diode with current block layer 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 64007
Guo, Enqing; Liu, Zhiqiang; Wang, Liancheng; Yi, Xiaoyan; Wang, Guohong
收藏  |  浏览/下载：19/0  |  提交时间：2012/06/14
Electrical characteristics of a vertical light emitting diode with N-type contacts on a selectively wet-etching roughened surface 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 2, 页码: 24009
Wang, Liancheng; Guo, Enqing; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Guohong
收藏  |  浏览/下载：13/0  |  提交时间：2012/06/14
Theoretical study of polarization-doped GaN-based light-emitting diodes 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: 101110
Zhang, L.; Ding, K.; Liu, N.X.; Wei, T.B.; Ji, X.L.; Ma, P.; Yan, J.C.; Wang, J.X.; Zeng, Y.P.; Li, J.M.
收藏  |  浏览/下载：24/0  |  提交时间：2012/06/14
High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 3, 页码: 33002
Yin, Haibo; Wang, Xiaoliang; Ran, Junxue; Hu, Guoxin; Zhang, Lu; Xiao, Hongling; Li, Jing; Li, Jinmin
收藏  |  浏览/下载：21/0  |  提交时间：2012/06/14
Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003
Bi, Yang; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yang, Cuibai; Peng, Enchao; Lin, Defeng; Feng, Chun; Jiang, Lijuan,
收藏  |  浏览/下载：12/0  |  提交时间：2012/06/14
Structures and optical characteristics of InGaN quantum dots grown by MBE 期刊论文
xiyou jinshu cailiao yu gongcheng/rare metal materials and engineering, 2011, 卷号: 40, 期号: 11, 页码: 2030-2032
Wang, Baozhu; Yan, Cuiying; Wang, Xiaoliang
收藏  |  浏览/下载：22/0  |  提交时间：2012/06/14
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan X
收藏  |  浏览/下载：81/5  |  提交时间：2011/07/05
Improved III-nitrides based light-emitting diodes anti-electrostatic discharge capacity with an AlGaN/GaN stack insert layer 期刊论文
ieee international conference on group iv photonics gfp, 2011, 卷号: 32, 期号: 11, 页码: 114007
Li, Zhicong; Li, Panpan; Wang, Bing; Li, Hongjian; Liang, Meng; Yao, Ran; Li, Jing; Deng, Yuanming; Yi, Xiaoyan; Wang, Guohong; Li, Jinmin
收藏  |  浏览/下载：22/0  |  提交时间：2012/06/14
Influence of growth conditions on the V-defects in InGaN/GaN MQWs 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103001
Ji, Panfeng; Liu, Naixin; Wei, Xuecheng; Liu, Zhe; Lu, Hongxi; Wang, Junxi; Li, Jinmin
收藏  |  浏览/下载：17/0  |  提交时间：2012/06/14

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