High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system

	High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system
	Yin, Haibo ; Wang, Xiaoliang ; Ran, Junxue ; Hu, Guoxin ; Zhang, Lu ; Xiao, Hongling ; Li, Jing ; Li, Jinmin
刊名	journal of semiconductors
	2011
卷号	32 期号:3 页码:33002
关键词	Epitaxial growth Gallium nitride
ISSN号	16744926
通讯作者	yin, h.(hbyin@semi.ac.cn)
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2012-06-14
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23041]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Yin, Haibo,Wang, Xiaoliang,Ran, Junxue,et al. High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system[J]. journal of semiconductors,2011,32(3):33002.
APA	Yin, Haibo.,Wang, Xiaoliang.,Ran, Junxue.,Hu, Guoxin.,Zhang, Lu.,...&Li, Jinmin.(2011).High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system.journal of semiconductors,32(3),33002.
MLA	Yin, Haibo,et al."High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system".journal of semiconductors 32.3(2011):33002.