Influence of growth conditions on the V-defects in InGaN/GaN MQWs

	Influence of growth conditions on the V-defects in InGaN/GaN MQWs
	Ji, Panfeng ; Liu, Naixin ; Wei, Xuecheng ; Liu, Zhe ; Lu, Hongxi ; Wang, Junxi ; Li, Jinmin
刊名	journal of semiconductors
	2011
卷号	32 期号:10 页码:103001
关键词	Gallium nitride Growth temperature Semiconductor quantum wells Surface defects
ISSN号	16744926
通讯作者	ji, p.(jipanfeng@semi.ac.cn)
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2012-06-14
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23148]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Ji, Panfeng,Liu, Naixin,Wei, Xuecheng,et al. Influence of growth conditions on the V-defects in InGaN/GaN MQWs[J]. journal of semiconductors,2011,32(10):103001.
APA	Ji, Panfeng.,Liu, Naixin.,Wei, Xuecheng.,Liu, Zhe.,Lu, Hongxi.,...&Li, Jinmin.(2011).Influence of growth conditions on the V-defects in InGaN/GaN MQWs.journal of semiconductors,32(10),103001.
MLA	Ji, Panfeng,et al."Influence of growth conditions on the V-defects in InGaN/GaN MQWs".journal of semiconductors 32.10(2011):103001.