Theoretical study of polarization-doped GaN-based light-emitting diodes

	Theoretical study of polarization-doped GaN-based light-emitting diodes
	Zhang, L. ; Ding, K. ; Liu, N.X. ; Wei, T.B. ; Ji, X.L. ; Ma, P. ; Yan, J.C. ; Wang, J.X. ; Zeng, Y.P. ; Li, J.M.
刊名	applied physics letters
	2011
卷号	98 期号:10 页码:101110
关键词	Electron injection Gallium alloys Gallium nitride Light Light emission Organic light emitting diodes(OLED) Polarization
ISSN号	00036951
通讯作者	zhang, l.(zhanglian07@semi.ac.cn)
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2012-06-14
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23143]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Zhang, L.,Ding, K.,Liu, N.X.,et al. Theoretical study of polarization-doped GaN-based light-emitting diodes[J]. applied physics letters,2011,98(10):101110.
APA	Zhang, L..,Ding, K..,Liu, N.X..,Wei, T.B..,Ji, X.L..,...&Li, J.M..(2011).Theoretical study of polarization-doped GaN-based light-emitting diodes.applied physics letters,98(10),101110.
MLA	Zhang, L.,et al."Theoretical study of polarization-doped GaN-based light-emitting diodes".applied physics letters 98.10(2011):101110.