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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Fabrication of high quality two-dimensional photonic crystal mask layer patterns 期刊论文 optical and quantum electronics, 2009, 卷号: 41, 期号: 3, 页码: 151-158 Peng, YS (Peng, Yin-Sheng); Xu, B (Xu, Bo); Ye, XL (Ye, Xiao-Ling); Niu, JB (Niu, Jie-Bin); Jia, R (Jia, Rui); Wang, ZG (Wang, Zhan-Guo) 收藏  |  浏览/下载：407/97  |  提交时间：2010/03/08 Photonic crystal   Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 期刊论文 micron, 2004, 卷号: 35, 期号: 6, 页码: 475-480 Luo, XH; Wang, RM; Zhang, XP; Zhang, HZ; Yu, DP; Luo, MC 收藏  |  浏览/下载：145/32  |  提交时间：2010/03/09 transmission electron microscopy  electron energy loss spectroscopy  molecular beam epitaxy  gallium nitride  CHEMICAL-VAPOR-DEPOSITION  EPITAXY  LAYER   Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 会议论文 international wuhan symposium on advanced electron microscopy (iwsaem), wuhan, peoples r china, oct 17-21, 2003 Luo XH; Wang RM; Zhang XP; Zhang HZ; Yu DP; Luo MC 收藏  |  浏览/下载：18/1  |  提交时间：2010/10/29 transmission electron microscopy  electron energy loss spectroscopy  molecular beam epitaxy  gallium nitride  CHEMICAL-VAPOR-DEPOSITION  EPITAXY  LAYER   Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er 期刊论文 journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 10-15 Chen CY; Chen WD; Song SF; Hsu CC 收藏  |  浏览/下载：441/2  |  提交时间：2010/08/12 low dimensional structures  chemical vapor deposition processes  nanomaterials  semiconducting materials  SILICON NANOCRYSTALS  LUMINESCENCE  EXCITATION   Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy 期刊论文 journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 9-13 Shen XM; Feng G; Zhang BS; Duan LH; Wang YT; Yang H 收藏  |  浏览/下载：38/0  |  提交时间：2010/08/12 scanning electron microscopy  X-ray diffraction  Metalorganic vapor phase epitaxy  selective area growth  gallium nitride  CUBIC GAN  OVERGROWN GAN  DEPOSITION  GAAS(100)   Progress of Si-based nanocrystalline luminescent materials 期刊论文 chinese science bulletin, 2002, 卷号: 47, 期号: 15, 页码: 1233-1242 Peng YC; Zhao XW; Fu GS 收藏  |  浏览/下载：84/0  |  提交时间：2010/08/12 Si-based nanomaterials  fabricated method  structural characterization  light emitting mechanism  Si-based photoelectronic devices  CHEMICAL-VAPOR-DEPOSITION  SELF-ASSEMBLING FORMATION  SILICON QUANTUM DOTS  LASER-ABLATION  OPTICAL-ABSORPTION  POROUS SILICON  LIGHT-EMISSION  PHOTOLUMINESCENCE  FABRICATION  OXYGEN   Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates 期刊论文 journal of crystal growth, 2002, 卷号: 246, 期号: 1-2, 页码: 69-72 Shen XM; Fu Y; Feng G; Zhang BS; Feng ZH; Wang YT; Yang H 收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12 transmission electron microscopy  X-ray diffraction  epitaxial lateral overgrowth  metalorganic vapor phase epitaxy  cubic gallium nitride  CHEMICAL-VAPOR-DEPOSITION  CUBIC GAN  PHASE EPITAXY  REDUCTION  GROWTH   SiO2/Ta interface reaction in magnetic multilayers and its influence on Ta buffer layers 期刊论文 chinese science bulletin, 2002, 卷号: 47, 期号: 19, 页码: 1601-1603 Yu GG; Ma JD; Zhu FG; Chai CL 收藏  |  浏览/下载：79/0  |  提交时间：2010/08/12 SiO2/Ta interface  interface reaction  X-ray photoelectron speptroscopy (XPS)  SPIN VALVES   INTERACTION OF CO WITH SI AND SIO2 DURING RAPID THERMAL ANNEALING 期刊论文 journal of applied physics, 1991, 卷号: 69, 期号: 11, 页码: 7612-7619 CHEN WD; CUI YD; HSU CC; TAO J 收藏  |  浏览/下载：26/0  |  提交时间：2010/11/15 GROWTH  SILICIDES  KINETICS  CRYSTAL  SILICON  FILMS  COSI2  CO2SI  TI