SiO2/Ta interface reaction in magnetic multilayers and its influence on Ta buffer layers

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	SiO2/Ta interface reaction in magnetic multilayers and its influence on Ta buffer layers
	Yu GG ; Ma JD ; Zhu FG ; Chai CL
刊名	chinese science bulletin
	2002
卷号	47 期号:19 页码:1601-1603
关键词	SiO2/Ta interface interface reaction X-ray photoelectron speptroscopy (XPS) SPIN VALVES
ISSN号	1001-6538
通讯作者	yu gg,univ sci & technol beijing,dept mat phys,beijing 100083,peoples r china.
中文摘要	ta is often used as a buffer layer in magnetic multilayers. in this study, ta/ni81fe19/ta multilayers were deposited by magnetron sputtering on sing-crystal si with a 300-nm-thick sio2 film. the composition and chemical states at the interface region of sio2/ta were studied using the x-ray photoelectron spectroscopy (xps) and peak decomposition technique. the results show that there is an 'inter-mixing layer" at the sio2/ta interface due to a thermodynamically favorable reaction: 15 sio2 + 37 ta = 6 ta2o5 + 5 ta5si3. therefore, the ta buffer layer thickness used to induce nife (111) texture increases.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11788]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yu GG,Ma JD,Zhu FG,et al. SiO2/Ta interface reaction in magnetic multilayers and its influence on Ta buffer layers[J]. chinese science bulletin,2002,47(19):1601-1603.
APA	Yu GG,Ma JD,Zhu FG,&Chai CL.(2002).SiO2/Ta interface reaction in magnetic multilayers and its influence on Ta buffer layers.chinese science bulletin,47(19),1601-1603.
MLA	Yu GG,et al."SiO2/Ta interface reaction in magnetic multilayers and its influence on Ta buffer layers".chinese science bulletin 47.19(2002):1601-1603.