Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer
	Luo XH ; Wang RM ; Zhang XP ; Zhang HZ ; Yu DP ; Luo MC
	2004
会议名称	international wuhan symposium on advanced electron microscopy (iwsaem)
会议日期	oct 17-21, 2003
会议地点	wuhan, peoples r china
关键词	transmission electron microscopy electron energy loss spectroscopy molecular beam epitaxy gallium nitride CHEMICAL-VAPOR-DEPOSITION EPITAXY LAYER
页码	475-480
通讯作者	wang rm peking univ electron microscopy lab beijing 100871 peoples r china. 电子邮箱地址: rmwang@pku.edu.cn
中文摘要	polycrystalline gan thin films have been deposited epitaxially on a zno-buffered (111)-oriented si substrate by molecular beam epitaxy. the microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (tem). a sio2 amorphous layer about 3.5 nm in thickness between the si/zno interface has been identified by means of spatially resolved electron energy loss spectroscopy. cross-sectional and plan-view tem investigations reveal (gan/zno/sio2/si) layers exhibiting definite a crystallographic relationship: [111](si)//[111](zno)//[0001](gan) along the epitaxy direction. gan films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. a three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline gan films and the functionality of the buffer layer. (c) 2004 elsevier ltd. all rights reserved.
英文摘要	polycrystalline gan thin films have been deposited epitaxially on a zno-buffered (111)-oriented si substrate by molecular beam epitaxy. the microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (tem). a sio2 amorphous layer about 3.5 nm in thickness between the si/zno interface has been identified by means of spatially resolved electron energy loss spectroscopy. cross-sectional and plan-view tem investigations reveal (gan/zno/sio2/si) layers exhibiting definite a crystallographic relationship: [111](si)//[111](zno)//[0001](gan) along the epitaxy direction. gan films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. a three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline gan films and the functionality of the buffer layer. (c) 2004 elsevier ltd. all rights reserved.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:24z (gmt). no. of bitstreams: 1 2788.pdf: 430001 bytes, checksum: c9c135519c0e2550e17776e559957925 (md5) previous issue date: 2004; 会议主办方: wuhan univ; peking univ, electron microscopy lab, beijing 100871, peoples r china; peking univ, state key lab mesoscop phys, sch phys, beijing 100871, peoples r china; chinese acad sci, inst semicond res, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	会议主办方: wuhan univ
会议录	micron, 35 (6)
会议录出版者	pergamon-elsevier science ltd ; the boulevard, langford lane, kidlington, oxford ox5 1gb, england
会议录出版地	the boulevard, langford lane, kidlington, oxford ox5 1gb, england
学科主题	半导体材料
语种	英语
ISSN号	0968-4328
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13599]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Luo XH,Wang RM,Zhang XP,et al. Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer[C]. 见:international wuhan symposium on advanced electron microscopy (iwsaem). wuhan, peoples r china. oct 17-21, 2003.