Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy

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	Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy
	Shen XM ; Feng G ; Zhang BS ; Duan LH ; Wang YT ; Yang H
刊名	journal of crystal growth
	2003
卷号	252 期号:1-3 页码:9-13
关键词	scanning electron microscopy X-ray diffraction Metalorganic vapor phase epitaxy selective area growth gallium nitride CUBIC GAN OVERGROWN GAN DEPOSITION GAAS(100)
ISSN号	0022-0248
通讯作者	shen xm,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china.
中文摘要	selective area growth (sag) of gan on sio2 stripe-patterned gan/gaas(001) substrates was carried out by metalorganic vapor-phase epitaxy. the sag samples were investigated by using x-ray diffraction (xrd) and scanning electron microscopy (sem). sem observations showed that the morphology of sag gan is strongly dependent on the window stripe orientation and slightly affected by the orientation relationship between the window stripes and the gas flow. the (i 1 1)b sidewalls formed on the sag gan stripes are found to be stable. xrd measurements indicated the full-widths at half-maximum (fwhms) of cubic gan (0 0 2) rocking curves are reduced after sag. the measured fwhms with omega-axis parallel to [1(1) over bar 0] are always larger than the fwhm values obtained with omega-axis parallel to [i 10], regardless of the orientation relationship between the w-axis and the gan stripes. (c) 2003 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11596]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Shen XM,Feng G,Zhang BS,et al. Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy[J]. journal of crystal growth,2003,252(1-3):9-13.
APA	Shen XM,Feng G,Zhang BS,Duan LH,Wang YT,&Yang H.(2003).Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy.journal of crystal growth,252(1-3),9-13.
MLA	Shen XM,et al."Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy".journal of crystal growth 252.1-3(2003):9-13.