INTERACTION OF CO WITH SI AND SIO2 DURING RAPID THERMAL ANNEALING

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	INTERACTION OF CO WITH SI AND SIO2 DURING RAPID THERMAL ANNEALING
	CHEN WD ; CUI YD ; HSU CC ; TAO J
刊名	journal of applied physics
	1991
卷号	69 期号:11 页码:7612-7619
关键词	GROWTH SILICIDES KINETICS CRYSTAL SILICON FILMS COSI2 CO2SI TI
ISSN号	0021-8979
通讯作者	chen wd acad sinicainst semicondpob 912beijing 100083peoples r china
中文摘要	the interaction of co with si and sio2 during rapid thermal annealing has been investigated. phase sequence, layer morphology, and reaction kinetics were studied by sheet resistance, x-ray diffraction, auger electron spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy. with increasing annealing temperature, co film on si(100) is transformed sequentially into co2si, cosi, and finally cosi2 which corresponds to the minimum of sheet resistance. no evidence of silicide formation was observed for co/sio2 annealed even at the high temperature of 1050-degrees-c.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14303]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	CHEN WD,CUI YD,HSU CC,et al. INTERACTION OF CO WITH SI AND SIO2 DURING RAPID THERMAL ANNEALING[J]. journal of applied physics,1991,69(11):7612-7619.
APA	CHEN WD,CUI YD,HSU CC,&TAO J.(1991).INTERACTION OF CO WITH SI AND SIO2 DURING RAPID THERMAL ANNEALING.journal of applied physics,69(11),7612-7619.
MLA	CHEN WD,et al."INTERACTION OF CO WITH SI AND SIO2 DURING RAPID THERMAL ANNEALING".journal of applied physics 69.11(1991):7612-7619.