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浏览/检索结果: 共15条，第1-10条 帮助 限定条件 发表日期：2017    专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Air-and Active Hydrogen-Induced Electron Trapping and Operational Instability in n-Type Polymer Field-Effect Transistors 期刊论文 ADVANCED FUNCTIONAL MATERIALS, 2017 Un, Hio-Ieng; Zheng, Yu-Qing; Shi, Ke; Wang, Jie-Yu; Pei, Jian 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 SELF-ASSEMBLED MONOLAYERS  ORGANIC TRANSISTORS  THRESHOLD VOLTAGE  THIN-FILM  CARRIER DENSITY  PERFORMANCE  PENTACENE  STABILITY  GROWTH  SEMICONDUCTORS   高性能钆铝锌氧薄膜晶体管的制备 期刊论文 液晶与显示, 2017 董俊辰; 郁文; 李慧津; 韩德栋; 张盛东; 张兴; 王漪 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 钆铝锌氧  薄膜晶体管  有源层  GdAZO  TFT  active layer   沟道长度对碳纳米管薄膜晶体管阈值电压的调控作用 期刊论文 真空科学与技术学报, 2017 董国栋; 夏继业; 孟虎; 田博元; 黄奇; 赵杰; 毛德丰; 刘晓惠; 方家; 梁学磊 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 碳纳米管  薄膜晶体管  阈值电压  沟道长度  Carbon nanotube  Thin film transistor  Threshold voltage  Channel length   Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate 期刊论文 SCIENTIFIC REPORTS, 2017 Cong, Yingying; Han, Dedong; Dong, Junchen; Zhang, Shengdong; Zhang, Xing; Wang, Yi 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Oxygen Interstitial Creation in a-IGZO Thin-Film Transistors Under Positive Gate-Bias Stress 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017 Zhou, Xiaoliang; Shao, Yang; Zhang, Letao; Lu, Huiling; He, Hongyu; Han, Dedong; Wang, Yi; Zhang, Shengdong 收藏  |  浏览/下载：7/0  |  提交时间：2017/12/03 Amorphous oxide semiconductor  thin-film transistors  reliability  positive gate-bias stress  defect creation   Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer 期刊论文 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017 Zhang, Letao; Zhou, Xiaoliang; Chang, Baozhu; Wang, Longyan; Xiao, Yuxiang; He, Hongyu; Zhang, Shengdong 收藏  |  浏览/下载：7/0  |  提交时间：2017/12/03 Amorphous indium gallium zinc oxide  Thin film transistors  Source-drain parasitic resistance  TiO2:Nb  Films thickness  THRESHOLD VOLTAGE  ANATASE TIO2  PERFORMANCE  SHIFT  TFTS   Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors 期刊论文 APPLIED PHYSICS LETTERS, 2017 Chiang, Hsiao-Cheng; Chang, Ting-Chang; Liao, Po-Yung; Chen, Bo-Wei; Tsao, Yu-Ching; Tsai, Tsung-Ming; Chien, Yu-Chieh; Yang, Yi-Chieh; Chen, Kuan-Fu; Yang, Chung-I; Hung, Yu-Ju; Chang, Kuan-Chang; Zhang, Sheng-Dong; Lin, Sung-Chun; Yeh, Cheng-Yen 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 IGZO TFTS  ZNO-CU  SEMICONDUCTORS  TRANSITIONS  IMPURITIES  OXIDE  SHIFT   Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique 期刊论文 NANOSCALE RESEARCH LETTERS, 2017 Li, Huijin; Han, Dedong; Liu, Liqiao; Dong, Junchen; Cui, Guodong; Zhang, Shengdong; Zhang, Xing; Wang, Yi 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 Thin-film transistor  ALD  Bi-layer channel  ZnO  AZO  GATE DIELECTRICS  ELECTRICAL CHARACTERISTICS  ZNO  SEMICONDUCTOR  TEMPERATURE  METAL   Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017 Zhou, Xiaoliang; Shao, Yang; Zhang, Letao; Xiao, Xiang; Han, Dedong; Wang, Yi; Zhang, Shengdong 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 Amorphous oxide semiconductor  thinfilm transistors  oxygen adsorption  surface-state model  OXIDE  ZNO  WATER   Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition 期刊论文 JAPANESE JOURNAL OF APPLIED PHYSICS, 2017 Cui, Guodong; Han, Dedong; Dong, Junchen; Cong, Yingying; Zhang, Xiaomi; Li, Huijin; Yu, Wen; Zhang, Shengdong; Zhang, Xing; Wang, Yi 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 ZINC-OXIDE  ZNO