Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic   Layer Deposition Technique

doi:10.1186/s11671-017-1999-7

CORC > 北京大学 > 信息科学技术学院

	Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique
	Li, Huijin ; Han, Dedong ; Liu, Liqiao ; Dong, Junchen ; Cui, Guodong ; Zhang, Shengdong ; Zhang, Xing ; Wang, Yi
刊名	NANOSCALE RESEARCH LETTERS
	2017
关键词	Thin-film transistor ALD Bi-layer channel ZnO AZO GATE DIELECTRICS ELECTRICAL CHARACTERISTICS ZNO SEMICONDUCTOR TEMPERATURE METAL
DOI	10.1186/s11671-017-1999-7
英文摘要	This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors ( AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O-2 at 300 degrees C exhibit a low leakage current of 2.5 x 10(-13)A, Ion/ Ioff ratio of 1.4 x 10(7), subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.; National Basic Research Program of China (973 program) [2013CBA01604]; National Natural Science Foundation of China [61275025]; SCI(E); ARTICLE; 12
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/474495]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Huijin,Han, Dedong,Liu, Liqiao,et al. Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique[J]. NANOSCALE RESEARCH LETTERS,2017.
APA	Li, Huijin.,Han, Dedong.,Liu, Liqiao.,Dong, Junchen.,Cui, Guodong.,...&Wang, Yi.(2017).Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique.NANOSCALE RESEARCH LETTERS.
MLA	Li, Huijin,et al."Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique".NANOSCALE RESEARCH LETTERS (2017).