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Two dimensionalization induced enhancing dielectric anisotropy of titania 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 卷号: 842, 页码: 7
作者:  Wang, Liang;  Soh, Ai Kah;  Liu, Shuangyi
收藏  |  浏览/下载：100/0  |  提交时间：2020/08/24
Layer dependent direct tunneling behaviors through two dimensional titania nanosheets 期刊论文
COMPUTATIONAL MATERIALS SCIENCE, 2020, 卷号: 173, 页码: 5
作者:  Pu, Yayun;  Xie, Xiong;  Wang, Liang;  Shen, Jun
收藏  |  浏览/下载：47/0  |  提交时间：2020/08/24
Poly (vinyl alcohol)/graphene oxide hybrid electrolyte gated oxide neuron transistors for multifunctional logic applications 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 11
作者:  Han, Hui;  Zhu, Li Qiang;  Ren, Zheng Yu;  Xiao, Hui;  Guo, Li Qiang
收藏  |  浏览/下载：12/0  |  提交时间：2020/12/16
FTIR  
Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778, 期号: 无, 页码: 579-587
作者:  Wang, Die;  He, Gang;  Liang, Shuang;  Liu, Mao
收藏  |  浏览/下载：56/0  |  提交时间：2020/03/31
Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: Vol.778, 页码: 579-587
作者:  Shuang Liang;  Die Wang;  Mao Liu;  Gang He
收藏  |  浏览/下载：9/0  |  提交时间：2019/04/24
Bipolar plasticity of the synapse transistors based on IGZO channel with HfOxNy/HfO2/HfOxNy sandwich gate dielectrics 期刊论文
Applied Physics Letters, 2019, 卷号: 115, 期号: 2
作者:  Yang, Wei;  Jiang, Ran
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/11
Bipolar plasticity of the synapse transistors based on IGZO channel with HfOxNy/HfO2/HfOxNy sandwich gate dielectrics 期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: 115, 期号: 2
作者:  Yang, Wei;  Jiang, Ran
收藏  |  浏览/下载：13/0  |  提交时间：2019/12/11
Aqueous solution-processed, self-flattening AlOx:Y dielectrics for fully-transparent thin-film transistors 期刊论文
CERAMICS INTERNATIONAL, 2019, 卷号: 45, 期号: 13, 页码: 15883-15891
作者:  Wu, Weihua;  Liang, Lingyan;  Yu, Jingjing;  Xiao, Xi;  Zhang, Hongliang
收藏  |  浏览/下载：57/0  |  提交时间：2019/12/18
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang YM(杨育梅)
收藏  |  浏览/下载：6/0  |  提交时间：2020/11/13
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang, Yumei;  Lou, Haijun;  Lin, Xinnan
收藏  |  浏览/下载：10/0  |  提交时间：2019/11/15

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