QQ客服 官方微博 反馈留言

浏览/检索结果: 共6条，第1-6条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 卷号: 67, 期号: 10, 页码: 4046-4053 作者:  Zhanwei Shen;   Feng Zhang ;   Member;   IEEE;   Guoguo Yan;   Zhengxin Wen;   Wanshun Zhao;   Lei Wang;   Xingfang Liu;   Guosheng Sun;   Yiping Zeng 收藏  |  浏览/下载：10/0  |  提交时间：2021/05/24 The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition 期刊论文 Materials Science in Semiconductor Processing, 2019, 卷号: 94, 页码: 107-115 作者:  Jun Chen ;   Bowen Lv ;   Feng Zhang ;   Yinshu Wang ;   Xingfang Liu ;   Guoguo Yan ;   Zhanwei Shen ;   Zhengxin Wen ;   Lei Wang ;   Wanshun Zhao ;   Guosheng Sun ;   Chao Liu ;   Yiping Zeng 收藏  |  浏览/下载：6/0  |  提交时间：2020/07/31 Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures 期刊论文 Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 34, 页码: 345102 作者:  Huang Huolin;  Sun Zhonghao;  Cao Yaqing;  Li Feiyu;  Zhang Feng;  Wen Zhengxin;  Zhang Zifeng;  Liang Yung C.;  Hu Lizhong 收藏  |  浏览/下载：18/0  |  提交时间：2019/11/15 Investigation of surface traps-induced current collapse phenomenon in AlGaN/GaN high electron mobility transistors with schottky gate structures 期刊论文 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 卷号: 51 作者:  Huang, Huolin;  Sun, Zhonghao;  Cao, Yaqing;  Li, Feiyu;  Zhang, Feng 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/02 gallium nitride (GaN)  semiconductor devices  surface donor-like traps  current collapse   Obtaining Exact Electrical Parameters in Semiconductor Ohmic Contacts Using a Novel Electrode Pair Layout Design 会议论文 2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018-01-01 作者:  Huang, Huolin;  Sun, Zhonghao;  Cao, Yaqing;  Li, Feiyu;  Hu, Lizhong 收藏  |  浏览/下载：15/0  |  提交时间：2019/12/02 Electrode Pair (EP)  Ohmic contact  IC design  Modelling   A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 期号: 7, 页码: 941-944 作者:  Zhengxin Wen;  Feng Zhang;  Member;  IEEE;  Zhanwei Shen 收藏  |  浏览/下载：36/0  |  提交时间：2018/06/01