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	The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition
	Jun Chen ;   Bowen Lv ;   Feng Zhang ;   Yinshu Wang ;   Xingfang Liu ;   Guoguo Yan ;   Zhanwei Shen ;   Zhengxin Wen ;   Lei Wang ;   Wanshun Zhao ;   Guosheng Sun ;   Chao Liu ;   Yiping Zeng
刊名	Materials Science in Semiconductor Processing
	2019
卷号	94页码:107-115
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29561]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Jun Chen ; Bowen Lv ; Feng Zhang ; Yinshu Wang ; Xingfang Liu ; Guoguo Yan ; Zhanwei Shen ; Zhengxin Wen ; Lei Wang ; Wanshun Zhao ; Guosheng Sun ; Chao Liu ; Yiping Zeng. The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition[J]. Materials Science in Semiconductor Processing,2019,94:107-115.
APA	Jun Chen ; Bowen Lv ; Feng Zhang ; Yinshu Wang ; Xingfang Liu ; Guoguo Yan ; Zhanwei Shen ; Zhengxin Wen ; Lei Wang ; Wanshun Zhao ; Guosheng Sun ; Chao Liu ; Yiping Zeng.(2019).The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition.Materials Science in Semiconductor Processing,94,107-115.
MLA	Jun Chen ; Bowen Lv ; Feng Zhang ; Yinshu Wang ; Xingfang Liu ; Guoguo Yan ; Zhanwei Shen ; Zhengxin Wen ; Lei Wang ; Wanshun Zhao ; Guosheng Sun ; Chao Liu ; Yiping Zeng."The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition".Materials Science in Semiconductor Processing 94(2019):107-115.

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