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科研机构
半导体研究所 [35]
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期刊论文 [29]
会议论文 [6]
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2011 [3]
2010 [1]
2009 [2]
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半导体材料 [35]
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Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition
期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:
Li GK
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浏览/下载:74/2
  |  
提交时间:2011/07/05
vanadium dioxide
infrared transition
diffraction effect
dual ion beam sputtering
annealing
Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002
Wu, Hailei
;
Sun, Guosheng
;
Yang, Ting
;
Yan, Guoguo
;
Wang, Lei
;
Zhao, Wanshun
;
Liu, Xingfang
;
Zeng, Yiping
;
Wen, Jialiang
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  |  
浏览/下载:27/0
  |  
提交时间:2012/06/14
Aluminum
Annealing
Ion implantation
Pressure effects
Semiconducting silicon compounds
Silicon carbide
Surface roughness
Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions
期刊论文
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 1, 页码: 429-432
作者:
Zhang ML
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浏览/下载:65/4
  |  
提交时间:2011/07/07
GaN
Ferromagnetic
Implantation
Annealing
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 15, 页码: art. no. 151904
作者:
Jin P
;
Wei HY
;
Song HP
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  |  
浏览/下载:185/32
  |  
提交时间:2010/05/04
alloying
annealing
electrical conductivity
excitons
II-VI semiconductors
magnesium compounds
MOCVD coatings
photoluminescence
positron annihilation
semiconductor thin films
vacancies (crystal)
wide band gap semiconductors
zinc compounds
SEMICONDUCTORS
EMISSION
ORIGIN
DIODES
Strong room-temperature ferromagnetism in Cu-implanted nonpolar GaN films
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113921
Sun LL
;
Yan FW
;
Zhang HX
;
Wang JX
;
Zeng YP
;
Wang GH
;
Li JM
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  |  
浏览/下载:99/0
  |  
提交时间:2010/04/03
annealing
Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method
期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 7, 页码: 1723-1727
Zhao H
;
Wang SM
;
Zhao QX
;
Sadeghi M
;
Larsson A
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  |  
浏览/下载:180/35
  |  
提交时间:2010/03/08
Quantum well
Dilute nitride
Rapid thermal annealing
InGaAs
GaInNAs
Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering
期刊论文
journal of crystal growth, 2006, 卷号: 290, 期号: 1, 页码: 56-60
作者:
Yin ZG
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  |  
浏览/下载:54/0
  |  
提交时间:2010/04/11
crystal structure
thermal annealing
X-ray diffraction
RF magnetron sputtering
zinc oxide
semiconducting II-VI materials
P-TYPE ZNO
SPRAY-PYROLYSIS
ZINC-OXIDE
ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target
期刊论文
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845
Zhao J (Zhao Jie)
;
Hu LZ (Hu Lizhong)
;
Wang ZY (Wang Zhaoyang)
;
Sun J (Sun Jie)
;
Wang ZJ (Wang Zhijun)
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  |  
浏览/下载:24/0
  |  
提交时间:2010/04/11
ZnO
pulsed laser deposition
oxygen pressure
annealing
X-ray diffraction
photoluminescence
ULTRAVIOLET EMISSION
ROOM-TEMPERATURE
ZINC-OXIDE
Photoluminescence from C+ ion-implanted and electrochemical etched Si layers
期刊论文
applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427
Shi LW (Shi Liwei)
;
Wang Q (Wang Qiang)
;
Li YG (Li Yuguo)
;
Xue CS (Xue Chengshan)
;
Zhuang HZ (Zhuang Huizhao)
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2010/04/11
ion implantation
annealing
chemical etching
photoluminescence
POROUS SILICON
LUMINESCENCE
The study of high temperature annealing of a-SiC : H films
会议论文
3rd international materials symposium/12th meeting of the sociedad-portuguesa-da-materials (materials 2005/spm), aveiro, portugal, mar 20-23, 2005
Zhang, S
;
Hu, Z
;
Raniero, L
;
Liao, X
;
Ferreira, I
;
Fortunato, E
;
Vilarinho, P
;
Perreira, L
;
Martins, R
收藏
  |  
浏览/下载:209/71
  |  
提交时间:2010/03/29
silicon carbide
high temperature annealing
thin film
SILICON
PECVD
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