Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions
Zhang ML
刊名applied physics a-materials science & processing
2011
卷号104期号:1页码:429-432
关键词GaN Ferromagnetic Implantation Annealing
学科主题半导体材料
收录类别SCI
语种英语
公开日期2011-07-07 ; 2011-07-15
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/21394]  
专题半导体研究所_半导体材料科学中心
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Zhang ML. Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions[J]. applied physics a-materials science & processing,2011,104(1):429-432.
APA Zhang ML.(2011).Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions.applied physics a-materials science & processing,104(1),429-432.
MLA Zhang ML."Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions".applied physics a-materials science & processing 104.1(2011):429-432.
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