Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering
Yin ZG
刊名journal of crystal growth
2006
卷号290期号:1页码:56-60
关键词crystal structure thermal annealing X-ray diffraction RF magnetron sputtering zinc oxide semiconducting II-VI materials P-TYPE ZNO SPRAY-PYROLYSIS ZINC-OXIDE
ISSN号0022-0248
通讯作者wang, p, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: pwang@mail.semi.ac.cn
中文摘要sb-doped and undoped zno thin films were deposited on si (100) substrates by radio frequency (rf) magnetron sputtering. x-ray diffraction (xrd) and scanning electron microscopy (sem) analyses revealed that all the films had polycrystalline wurtzite structure and c-axis preferred orientation. room temperature hall measurements showed that the as-grown films were n-type and conducting (rho similar to 1-10 omega cm). annealing in a nitrogen ambient at 400 degrees c for 1 h made both samples highly resistive (rho > 10(3) omega cm). increasing the annealing temperature up to 800 c, the resistivity of the ttndoped zno film decreased gradually, but it increased for the sb-doped zno film. in the end, the sb-doped zno film annealed at 800 c became semi-insulating with a resistivity of 10(4)omega cm. in addition, the effects of annealing treatment and sb-doping on the structural and electrical properties are discussed. (c) 2006 elsevier b.v. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-04-11
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/10738]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Yin ZG. Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering[J]. journal of crystal growth,2006,290(1):56-60.
APA Yin ZG.(2006).Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering.journal of crystal growth,290(1),56-60.
MLA Yin ZG."Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering".journal of crystal growth 290.1(2006):56-60.
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