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科研机构
半导体研究所 [149]
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期刊论文 [149]
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2011 [11]
2010 [12]
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半导体材料 [149]
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Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
Jin, L
;
Zhou, HY
;
Qu, SC
;
Wang, ZG
收藏
  |  
浏览/下载:91/0
  |  
提交时间:2012/02/06
Patterned substrate
Ion implantation
Ordered nanodots
Anodic aluminum oxide
QUANTUM DOTS
ISLANDS
GROWTH
SEMICONDUCTORS
NANOSTRUCTURES
COMPUTATION
INGAAS
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:
Jia CH
;
Song HP
收藏
  |  
浏览/下载:118/2
  |  
提交时间:2011/07/05
Anisotropy
Crystal morphology
Metalorganic chemical vapor deposition
a-Plane InN
INDIUM NITRIDE
MOVPE GROWTH
CUBIC INN
SAPPHIRE
GAN
MBE
Wurtzite to zincblende transition of InN films on(011) SrTiO3 by decreasing trimethylindium flows
期刊论文
applied physics a: materials science and processing, 2011, 页码: 1-5
Jia, C.H.
;
Chen, Y.H.
;
Zhang, B.
;
Liu, X.L.
;
Yang, S.Y.
;
Zhang, W.F.
;
Wang, Z.G.
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/06/14
Absorption
Absorption spectroscopy
Crystal atomic structure
Epitaxial growth
Metallorganic chemical vapor deposition
Optical properties
Organic chemicals
Strontium alloys
Strontium titanates
X ray diffraction
Zinc sulfide
Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:
Yin ZG
;
Zhang XW
;
Tan HR
;
Fan YM
;
Zhang SG
收藏
  |  
浏览/下载:42/3
  |  
提交时间:2011/07/05
HIGH-PRESSURE SYNTHESIS
VAPOR-DEPOSITION
NUCLEATION
EMISSION
DIAMOND
GROWTH
Behavioural investigation of InN nanodots by surface topographies and phase images
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 44, 页码: 445306
Deng, QW
;
Wang, XL
;
Xiao, HL
;
Wang, CM
;
Yin, HB
;
Chen, H
;
Lin, DF
;
Li, JM
;
Wang, ZG
;
Hou, X
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2012/01/06
QUANTUM DOTS
SOLAR-CELLS
GROWTH
FILMS
GAN
Multi-wafer3C-SiC thin films grown on Si(100) in a vertical HWLPCVD reactor
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 63001
Yan, Guoguo
;
Sun, Guosheng
;
Wu, Hailei
;
Wang, Lei
;
Zhao, Wanshun
;
Liu, Xingfang
;
Zeng, Yiping
;
Wen, Jialiang
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  |  
浏览/下载:23/0
  |  
提交时间:2012/06/14
Chemical vapor deposition
Deposition
Electric resistance
Epitaxial growth
Film growth
Sheet resistance
Silicon carbide
Silicon wafers
High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 3, 页码: 33002
Yin, Haibo
;
Wang, Xiaoliang
;
Ran, Junxue
;
Hu, Guoxin
;
Zhang, Lu
;
Xiao, Hongling
;
Li, Jing
;
Li, Jinmin
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  |  
浏览/下载:21/0
  |  
提交时间:2012/06/14
Epitaxial growth
Gallium nitride
High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43005
Wu, Hailei
;
Sun, Guosheng
;
Yang, Ting
;
Yan, Guoguo
;
Wang, Lei
;
Zhao, Wanshun
;
Liu, Xingfang
;
Zeng, Yiping
;
Wen, Jialiang
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2012/06/14
Epitaxial growth
Ethylene
Growth rate
Morphology
Surface roughness
Influence of growth conditions on the V-defects in InGaN/GaN MQWs
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103001
Ji, Panfeng
;
Liu, Naixin
;
Wei, Xuecheng
;
Liu, Zhe
;
Lu, Hongxi
;
Wang, Junxi
;
Li, Jinmin
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2012/06/14
Gallium nitride
Growth temperature
Semiconductor quantum wells
Surface defects
Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate
期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 6, 页码: article no.68502
Wu M
;
Zeng YP
;
Wang JX
;
Hu Q
收藏
  |  
浏览/下载:49/2
  |  
提交时间:2011/07/05
LIGHT-EMITTING-DIODES
ULTRAVIOLET
GROWTH
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